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IRFIZ24N-010 PDF预览

IRFIZ24N-010

更新时间: 2024-12-01 09:29:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 34K
描述
Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFIZ24N-010 数据手册

  

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Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
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Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
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Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
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Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-013PBF INFINEON

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Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
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Power Field-Effect Transistor, 13A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFIZ24N-018PBF INFINEON

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13A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN