IRFIZ24EPBF

更新时间： 2024-11-30 03:36:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	222K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFIZ24EPBF 数据手册

PD - 95594

IRFIZ24EPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l IsolatedPackage

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

V_DSS= 60V

_DS(on)= 0.071Ω

l Lead-Free

Description

I_D= 14A

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial

applications. The moulding compound used provides

a high isolation capability and a low thermal resistance

between the tab and external heatsink. This isolation

is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to

a heatsink using a single clip or by a single screw

fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

9.6

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.19

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

2.9

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

5.2

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

07/23/04

12 3 4 5 6 7 8

中文翻译

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与IRFIZ24EPBF相关器件

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IRFIZ24G	INFINEON	获取价格	HEXFET POWER MOSFET
IRFIZ24G	VISHAY	获取价格	Power MOSFET
IRFIZ24G	KERSEMI	获取价格	Power MOSFET
IRFIZ24G_09	VISHAY	获取价格	Power MOSFET
IRFIZ24G-002	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24G-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24G-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24G-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24G-005	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24G-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal