IRFI9540G

更新时间： 2024-01-29 23:06:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	974K
描述
Power MOSFET

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数据手册

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IRFI9540G 数据手册

IRFI9540G, SiHFI9540G

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Isolated Package

- 100

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

Available

R_DS(on)(Ω)

V_GS= - 10 V

0.20

RoHS*

• Sink to Lead Creepage Dist. = 4.8 mm

• P-Channel

• 175 °C Operating Temperature

• Dynamic dV/dt

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Low Thermal Resistance

• Lead (Pb)-free Available

TO-220 FULLPAK

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI9540GPbF

SiHFI9540G-E3

IRFI9540G

Lead (Pb)-free

SnPb

SiHFI9540G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

- 100

UNIT

V_DS

V_GS

_C= 25 °C

- 11

Continuous Drain Current

V_GSat - 10 V

I_D

T_C=100°C

- 7.6

- 44

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.32

600

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 11

E_AR

4.8

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 5.5

- 55 to + 175

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 7.4 mH, R_G= 25 Ω, I_AS= - 11 A (see fig. 12).

c. I_SD≤ - 19 A, dI/dt ≤ 170 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91164

S-Pending-Rev. A, 16-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRFI9540G相关器件

型号	品牌	获取价格	描述	数据表
IRFI9540GPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
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IRFI9540N	INFINEON	获取价格	HEXFET Power MOSFET
IRFI9610G	INFINEON	获取价格	HEXFET POWER MOSFET
IRFI9610G	VISHAY	获取价格	Power MOSFET
IRFI9610GPBF	VISHAY	获取价格	Power MOSFET
IRFI9610GPBF	INFINEON	获取价格	HEXFET POWER MOSFET
IRFI9620G	INFINEON	获取价格	Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.0A)
IRFI9620G	VISHAY	获取价格	Power MOSFET
IRFI9620G-002	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal

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