5秒后页面跳转
IRFI9540N PDF预览

IRFI9540N

更新时间: 2024-09-28 22:31:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 155K
描述
HEXFET Power MOSFET

IRFI9540N 数据手册

 浏览型号IRFI9540N的Datasheet PDF文件第2页浏览型号IRFI9540N的Datasheet PDF文件第3页浏览型号IRFI9540N的Datasheet PDF文件第4页浏览型号IRFI9540N的Datasheet PDF文件第5页浏览型号IRFI9540N的Datasheet PDF文件第6页浏览型号IRFI9540N的Datasheet PDF文件第7页 
PD - 9.1487B  
IRFI9540N  
PRELIMINARY  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Isolated Package  
l High Voltage Isolation = 2.5KVRMS  
l Sink to Lead Creepage Dist. = 4.8mm  
l P-Channel  
D
VDSS = -100V  
RDS(on) = 0.117Ω  
G
l Fully Avalanche Rated  
Description  
ID = -15A  
S
FifthGenerationHEXFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The TO-220 Fullpak eliminates the need for additional  
insulating hardware in commercial-industrial  
applications. The moulding compound used provides  
a high isolation capability and a low thermal resistance  
between the tab and external heatsink. This isolation  
is equivalent to using a 100 micron mica barrier with  
standard TO-220 product. The Fullpak is mounted to  
a heatsink using a single clip or by a single screw  
fixing.  
TO-220 FULLPAK  
Absolute Maximum Ratings  
Parameter  
Max.  
-15  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current †  
-10  
A
-76  
PD @TC = 25°C  
Power Dissipation  
54  
W
W/°C  
V
Linear Derating Factor  
0.36  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
430  
Single Pulse Avalanche Energy‚†  
Avalanche Current†  
mJ  
-11  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ†  
Operating Junction and  
5.4  
mJ  
-5.0  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Junction-to-Ambient  
Typ.  
–––  
–––  
Max.  
2.8  
65  
Units  
RθJC  
RθJA  
°C/W  
3/16/98  

与IRFI9540N相关器件

型号 品牌 获取价格 描述 数据表
IRFI9610G INFINEON

获取价格

HEXFET POWER MOSFET
IRFI9610G VISHAY

获取价格

Power MOSFET
IRFI9610GPBF VISHAY

获取价格

Power MOSFET
IRFI9610GPBF INFINEON

获取价格

HEXFET POWER MOSFET
IRFI9620G INFINEON

获取价格

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.0A)
IRFI9620G VISHAY

获取价格

Power MOSFET
IRFI9620G-002 INFINEON

获取价格

Power Field-Effect Transistor, 3A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal
IRFI9620G-002PBF INFINEON

获取价格

Power Field-Effect Transistor, 3A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal
IRFI9620G-003PBF INFINEON

获取价格

Power Field-Effect Transistor, 3A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal
IRFI9620G-004 INFINEON

获取价格

Power Field-Effect Transistor, 3A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal