是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 2.8 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3.13 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI614BTU_FP001 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRFI614G | INFINEON |
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Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.1A) | |
IRFI614G | VISHAY |
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Power MOSFET | |
IRFI614G-002 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFI614G-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFI614G-004 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFI614G-004PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFI614G-005 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFI614G-005PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFI614G-006 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal |