5秒后页面跳转
IRFI614BTU PDF预览

IRFI614BTU

更新时间: 2024-11-06 12:59:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 650K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IRFI614BTU 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.92
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):2.8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.13 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

IRFI614BTU 数据手册

 浏览型号IRFI614BTU的Datasheet PDF文件第2页浏览型号IRFI614BTU的Datasheet PDF文件第3页浏览型号IRFI614BTU的Datasheet PDF文件第4页浏览型号IRFI614BTU的Datasheet PDF文件第5页浏览型号IRFI614BTU的Datasheet PDF文件第6页浏览型号IRFI614BTU的Datasheet PDF文件第7页 
November 2001  
IRFW614B / IRFI614B  
250V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters and  
switch mode power supplies.  
2.8A, 250V, R  
= 2.0@V = 10 V  
DS(on) GS  
Low gate charge ( typical 8.1 nC)  
Low Crss ( typical 7.5 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
!
G
D2-PAK  
IRFW Series  
I2-PAK  
IRFI Series  
G
S
G D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRFW614B / IRFI614B  
Units  
V
V
I
Drain-Source Voltage  
250  
2.8  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
1.8  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
8.5  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
45  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
2.8  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
4.0  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
Power Dissipation (T = 25°C) *  
3.13  
40  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.32  
-55 to +150  
W/°C  
°C  
T , T  
J
stg  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
3.14  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. B, November 2001  

与IRFI614BTU相关器件

型号 品牌 获取价格 描述 数据表
IRFI614BTU_FP001 FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFI614G INFINEON

获取价格

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.1A)
IRFI614G VISHAY

获取价格

Power MOSFET
IRFI614G-002 INFINEON

获取价格

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-002PBF INFINEON

获取价格

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-004 INFINEON

获取价格

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-004PBF INFINEON

获取价格

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-005 INFINEON

获取价格

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-005PBF INFINEON

获取价格

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-006 INFINEON

获取价格

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal