IRFI614G

更新时间： 2024-09-16 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1511K
描述
Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFI614G 数据手册

IRFI614G, SiHFI614G

Vishay Siliconix

Power MOSFET

FEATURES

• Isolated Package

PRODUCT SUMMARY

V_DS(V)

250

Available

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

_DS(on)(Ω)

V_GS= 10 V

2.0

RoHS*

Q_g(Max.) (nC)

8.2

1.8

COMPLIANT

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

_gs(nC)

_gd(nC)

4.5

• Low Thermal Resistance

Configuration

Single

• Lead (Pb)-free Available

TO-220 FULLPAK

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI614GPbF

SiHFI614G-E3

IRFI614G

Lead (Pb)-free

SnPb

SiHFI614G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

T_C= 25 °C

T_C=100°C

2.1

Continuous Drain Current

V_GSat 10 V

I_D

1.3

Pulsed Drain Current^a

I_DM

8.4

Linear Derating Factor

0.18

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

2.1

E_AR

2.3

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

2.0

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 22 mH, R_G= 25 Ω, I_AS= 2.1 A (see fig. 12).

c. I_SD≤ 2.7 A, dI/dt ≤ 65 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91145

S-Pending-Rev. A, 16-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRFI614G 替代型号

型号	品牌	替代类型	描述	数据表
IRFI614GPBF	VISHAY	完全替代	Power MOSFET

与IRFI614G相关器件

型号	品牌	获取价格	描述	数据表
IRFI614G-002	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-004	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-005	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-006	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-009	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal
IRFI614G-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal

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