Datasheet > IRFHM9331PBF_15

IRFHM9331PBF_15

更新时间： 2022-02-26 11:26:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	236K
描述
Compatible with Existing Surface Mount Techniques

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IRFHM9331PBF_15 数据手册

IRFHM9331PbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= -250μA

Reference to 25°C, I_D= -1mA

V_GS= -20V, I_D= -11A

Parameter

Drain-to-Source Breakdown Voltage

Min.

Typ.

–––

0.02

10.0

11.7

-1.8

-5.1

–––

Max.

–––

14.6

-2.4

–––

-1.0

-150

-10

Units

BV_DSS

ΔΒ

R_DS(on)

-30

–––

-1.3

–––

V_DSS/ T_J

Breakdown Voltage Temp. Coefficient

V/°C

Static Drain-to-Source On-Resistance

V_GS= -10V, I_D= -11A

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= -25μA

V_GS(th)

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

mV/°C

V_DS= -24V, V_GS= 0V

I_DSS

μA

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= -25V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

μA

V_GS= 25V

V_DS= -10V, I_D= -9.0A

V_DS= -15V,V_GS= -4.5V,I_D= - 9.0A

V_GS= -10V

gfs

Q_g

–––

Q_g

Total Gate Charge

V_DS= -15V

Q_gs

Q_gd

R_G

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain Charge

Gate Resistance

4.4

–––

I_D= -9.0A

V_DD= -15V, V_GS= -4.5V

Turn-On Delay Time

Rise Time

I_D= -1.0A

t_d(off)

t_f

R_G= 6.8

Turn-Off Delay Time

Fall Time

See Figs. 19a & 19b

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

1543

310

208

V_DS= -25V

Output Capacitance

Reverse Transfer Capacitance

ƒ = 1.0KHz

Avalanche Characteristics

Typ.

–––

Max.

Parameter

Units

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

-9.0

Diode Characteristics

Conditions

Parameter

Min.

Typ.

Max.

Units

I_S

MOSFET symbol

Continuous Source Current

–––

-2.8

showing the

(Body Diode)

I_SM

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)

–––

-90

V_SD

t_rr

T = 25°C, I = -2.8A, V = 0V

Diode Forward Voltage

–––

-1.2

T = 25°C, I = -2.8A, V_DD= -24V

Reverse Recovery Time

Reverse Recovery Charge

Q_rr

di/dt = 100/μs

Thermal Resistance

Typ.

Max.

Parameter

Units

Junction-to-Case

R_θJC

R_θJA

–––

Junction-to-Ambient

Junction-to-Ambient (t<10s)

°C/W

–––

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 1.904mH, R_G= 50Ω, I_AS= -9A.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

ꢀ R_θis measured at T_Jof approximately 90°C.

For DESIGN AID ONLY, not subject to production testing.

Current limited by package.

Submit Datasheet Feedback

December 16, 2013

123 4 5 6 7 8

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