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IRF723 PDF预览

IRF723

更新时间: 2024-11-18 20:15:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
1页 92K
描述
Power Field-Effect Transistor, 2.5A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRF723 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM针数:3
Reach Compliance Code:unknown风险等级:5.71
配置:Single最大漏极电流 (Abs) (ID):2.8 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

IRF723 数据手册

  

与IRF723相关器件

型号 品牌 获取价格 描述 数据表
IRF723-001 INFINEON

获取价格

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
IRF723-001PBF INFINEON

获取价格

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
IRF723-002 INFINEON

获取价格

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
IRF723-002PBF INFINEON

获取价格

2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET
IRF723-003 INFINEON

获取价格

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
IRF723-003PBF INFINEON

获取价格

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
IRF723-004 INFINEON

获取价格

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
IRF723-005 INFINEON

获取价格

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
IRF723-005PBF INFINEON

获取价格

2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET
IRF723-006 INFINEON

获取价格

Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Met