IRF7220PBF

更新时间： 2024-10-30 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	156K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF7220PBF 数据手册

PD - 95172

IRF7220PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Lead-Free

V_DSS= -14V

_DS(on)= 0.012Ω

Top View

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infrared, or wave soldering techniques.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-14

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

±11

±8.8

±88

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

110

V_GS

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

Units

°C/W

R_θJA

www.irf.com

10/6/04

12 3 4 5 6 7

中文翻译

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IRF7220PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF7425PBF	INFINEON	功能相似	HEXFET Power MOSFET

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