Datasheet > IRF634B

IRF634B

更新时间： 2024-11-25 12:34:51

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
9页	896K
描述
250V N-Channel MOSFET

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IRF634B 数据手册

IRF634B/IRFS634B

250V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters and

switch mode power supplies.

•

8.1A, 250V, R

= 0.45Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 29 nC)

Low Crss ( typical 20 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRF634B

IRFS634B

Units

Drain-Source Voltage

250

DSS

- Continuous (T = 25°C)

Drain Current

8.1

5.1

8.1 *

5.1 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

32.4

32.4 *

Gate-Source Voltage

± 30

200

8.1

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

7.4

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.59

0.3

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

IRF634B

IRFS634B

3.29

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

1.69

0.5

θJC

θCS

Thermal Resistance, Junction-to-Ambient Max.

62.5

θJA

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