IRF634NSTRR

更新时间： 2024-11-24 23:58:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	301K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 8A I(D) \| TO-263AB

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IRF634NSTRR 数据手册

PD - 94310

IRF634N

IRF634NS

IRF634NL

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

HEXFET^®Power MOSFET

V_DSS= 250V

_DS(on)= 0.435Ω

l Simple Drive Requirements

Description

FifthGenerationHEXFET^®PowerMOSFETsfromInternational

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combinedwiththefastswitchingspeedandruggedizeddevice

design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

I_D= 8.0A

TheTO-220packageisuniversallypreferredforallcommercial-

industrial applications at power dissipation levels to

approximately 50 watts. The low thermal resistance and low

package cost of the TO-220 contribute to its wide acceptance

throughout the industry.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existingsurfacemountpackage. TheD²Pakissuitableforhigh

current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

D²Pak

IRF634NS

TO-262

IRF634NL

TO-220AB

IRF634N

The through-hole version (IRF634NL) is available for low-

profile application.

Absolute Maximum Ratings

Parameter

Max.

8.0

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.6

P_D@T_C= 25°C

P_D@T_A= 25°C

Power Dissipation

Power Dissipationꢀ

3.8

Linear Derating Factor

0.59

± 20

110

4.8

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

8.8

V/ns

7.3

-55 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

www.irf.com

9/10/01

12 3 4 5 6 7...11

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与IRF634NSTRR相关器件

型号	品牌	获取价格	描述	数据表
IRF634NSTRRPBF	VISHAY	获取价格	Power MOSFET
IRF634PBF	VISHAY	获取价格	Power MOSFET
IRF634PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF634S	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
IRF634S	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634S, SiHF634S	VISHAY	获取价格	Power MOSFET
IRF634SPBF	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634SR	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634STRL	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me

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