是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.66 | Is Samacsys: | N |
雪崩能效等级(Eas): | 120 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 3.8 A | 最大漏源导通电阻: | 1.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 15 A |
认证状态: | COMMERCIAL | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF624-001 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met | |
IRF624-001PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met | |
IRF624-005PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met | |
IRF624-011PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met | |
IRF624-030 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met | |
IRF624A | FAIRCHILD |
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Advanced Power MOSFET | |
IRF624AJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met | |
IRF624B | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
IRF624F | INFINEON |
获取价格 |
Power Field-Effect Transistor, 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF624FPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |