5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRF612-005 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF612-005PBF | INFINEON |
获取价格 |
2.6A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET |
|
| IRF612-006PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF612-009 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF612-009PBF | INFINEON |
获取价格 |
2.6A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET |
|
| IRF612-010 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF612-010PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF612-011 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF612-011PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF612-013 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met |
|
塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
