5秒后页面跳转
IRF520STRLPBF PDF预览

IRF520STRLPBF

更新时间: 2024-02-25 05:04:23
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 135K
描述
暂无描述

IRF520STRLPBF 数据手册

 浏览型号IRF520STRLPBF的Datasheet PDF文件第2页浏览型号IRF520STRLPBF的Datasheet PDF文件第3页浏览型号IRF520STRLPBF的Datasheet PDF文件第4页浏览型号IRF520STRLPBF的Datasheet PDF文件第5页浏览型号IRF520STRLPBF的Datasheet PDF文件第6页浏览型号IRF520STRLPBF的Datasheet PDF文件第7页 
IRF520, SiHF520  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
100  
Available  
• Repetitive Avalanche Rated  
• 175 °C Operating Temperature  
• Fast Switching  
R
DS(on) (Ω)  
VGS = 10 V  
0.27  
RoHS*  
Qg (Max.) (nC)  
16  
4.4  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Ease of Paralleling  
7.7  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Configuration  
Single  
D
DESCRIPTION  
TO-220  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-220  
IRF520PbF  
SiHF520-E3  
IRF520  
Lead (Pb)-free  
SnPb  
SiHF520  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
100  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
9.2  
Continuous Drain Current  
V
GS at 10 V  
ID  
6.5  
A
Pulsed Drain Currenta  
IDM  
37  
Linear Derating Factor  
0.40  
200  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
9.2  
EAR  
6.0  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
60  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, RG = 25 Ω, IAS = 9.2 A (see fig. 12).  
c. ISD 9.2 A, dI/dt 110 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91017  
S-81240-Rev. A, 16-Jun-08  
www.vishay.com  
1

与IRF520STRLPBF相关器件

型号 品牌 描述 获取价格 数据表
IRF520T MOTOROLA 9 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

获取价格

IRF520U2 MOTOROLA Power Field-Effect Transistor, 9A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Meta

获取价格

IRF520UA MOTOROLA 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

获取价格

IRF520V INFINEON Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

获取价格

IRF520V NJSEMI Trans MOSFET N-CH 100V 9.6A 3-Pin(3+Tab) TO-220AB

获取价格

IRF520VL INFINEON Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

获取价格