IRF3007PBF

更新时间： 2024-11-05 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	212K
描述
HEXFET㈢ Power MOSFET

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IRF3007PBF 数据手册

PD - 95618

AUTOMOTIVE MOSFET

IRF3007PbF

HEXFET^®Power MOSFET

Typical Applications

42 Volts Automotive Electrical Systems

Lead-Free

V_DSS= 75V

Features

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Automotive [Q101] Qualified

R_DS(on)= 0.0126Ω

I_D= 75A

Description

Specifically designed for Automotive applications, this

design of HEXFET^®Power MOSFETs utilizes the

lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of

this HEXFET power MOSFET are a 175°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating. These combine

to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide

variety of other applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon limited)

Continuous Drain Current, V_GS@ 10V (See Fig.9)

Continuous Drain Current, V_GS@ 10V (Package limited)

Pulsed Drain Current

320

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

Gate-to-Source Voltage

± 20

E_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

280

946

E_AS(6 sigma)

I_AR

See Fig.12a, 12b, 15, 16

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1 (10)

N•m (lbf•in)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.74

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

8/2/04

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IRF3007PBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF3007	INFINEON	类似代替	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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