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IR2301S PDF预览

IR2301S

更新时间: 2024-02-16 02:58:34
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
18页 188K
描述
HIGH AND LOW SIDE DRIVER

IR2301S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOIC-8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:12 weeks
风险等级:1.75高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:2功能数量:1
端子数量:8最高工作温度:150 °C
最低工作温度:-40 °C标称输出峰值电流:0.35 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:1.75 mm
最大供电电压:20 V最小供电电压:5 V
标称供电电压:15 V电源电压1-最大:620 V
电源电压1-分钟:表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:0.28 µs
接通时间:0.3 µs宽度:3.9 mm
Base Number Matches:1

IR2301S 数据手册

 浏览型号IR2301S的Datasheet PDF文件第2页浏览型号IR2301S的Datasheet PDF文件第3页浏览型号IR2301S的Datasheet PDF文件第4页浏览型号IR2301S的Datasheet PDF文件第5页浏览型号IR2301S的Datasheet PDF文件第6页浏览型号IR2301S的Datasheet PDF文件第7页 
Data Sheet No. PD60201 Rev.D  
IR2301(S) &(PbF)  
HIGH AND LOW SIDE DRIVER  
Features  
Packages  
Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage dV/dt immune  
8 Lead PDIP  
IR2301  
Gate drive supply range from 5 to 20V  
Undervoltage lockout for both channels  
3.3V, 5V and 15V input logic compatible  
Matched propagation delay for both channels  
Logic and power ground +/- 5V offset.  
Lower di/dt gate driver for better noise immunity  
8 Lead SOIC  
IR2301S  
Outputs in phase with inputs  
Also available LEAD-FREE (PbF)  
Description  
2106/2301//2108//2109/2302/2304 Feature Comparison  
The IR2301(S) are high voltage, high speed  
power MOSFET and IGBT drivers with indepen-  
dent high and low side referenced output  
channels. Proprietary HVIC and latch immune  
CMOS technologies enable ruggedized mono-  
lithic construction. The logic input is compatible  
with standard CMOS or LSTTL output, down to  
3.3V logic. The output drivers feature a high  
pulse current buffer stage designed for minimum  
driver cross-conduction. The floating channel  
ꢁꢖꢎꢜꢝ  
ꢈꢗꢋꢊꢍ  
ꢘꢎꢙꢚꢛ  
ꢛꢎꢗꢞꢊꢛꢍꢚꢎꢗ  
ꢋꢖꢟꢠꢟꢗꢍꢚꢎꢗ  
ꢘꢎꢙꢚꢛ  
ꢔꢕꢖꢍ  
ꢓꢟꢕꢑꢚꢡꢟ  
$ꢖꢎꢊꢗꢞꢌꢔꢚꢗꢜ  
%&ꢐꢏ'%*ꢐ&  
%&ꢐꢏ4  
ꢁꢅꢇ  
ꢀꢃꢃ'ꢁꢅꢇ  
ꢁꢅꢇ  
ꢄꢈꢉ'ꢆꢈꢉ  
ꢄꢈꢉ'ꢆꢈꢉ  
ꢗꢎ  
ꢗꢎꢗꢟ  
%&ꢐ7  
ꢈꢗꢍꢟꢖꢗꢕꢘꢌ94ꢐꢗꢜ  
ꢔꢖꢎꢙꢖꢕꢡꢡꢕ;ꢘꢟꢌꢐ<94ꢣ9µꢜ  
ꢈꢗꢍꢟꢖꢗꢕꢘꢌ94ꢐꢗꢜ  
ꢢꢟꢜ  
%&ꢐ74  
ꢀꢃꢃ'ꢁꢅꢇ  
ꢁꢅꢇ  
%&ꢐ>'%*ꢐ%  
%&ꢐ>4  
ꢈꢉ'ꢃꢓ  
ꢢꢟꢜ  
ꢢꢟꢜ  
ꢔꢖꢎꢙꢖꢕꢡꢡꢕ;ꢘꢟꢌꢐ<94ꢣ9µꢜ  
ꢀꢃꢃ'ꢁꢅꢇ  
ꢄꢈꢉ'ꢆꢈꢉ  
ꢈꢗꢍꢟꢖꢗꢕꢘꢌ&ꢐꢐꢗꢜ  
%*ꢐ4  
ꢁꢅꢇ  
can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to  
600 volts.  
Typical Connection  
ꢊꢋꢌꢍꢎꢌꢏꢐꢐꢀ  
(Refer to Lead  
ꢁꢁ  
Assignments for  
correct pin con-  
figuration). This/  
ꢁꢁ  
T
h
e
s
e
ꢄꢈꢉ  
ꢆꢈꢉ  
ꢄꢈꢉ  
ꢆꢈꢉ  
ꢄꢅ  
d i a g r a m ( s )  
show electrical  
connect ions  
only. Please re-  
fer to our Appli-  
cation Notes  
and DesignTips  
for proper circuit  
board layout.  
ꢑꢅ  
ꢆꢅꢒꢓ  
ꢁꢅꢇ  
ꢆꢅ  
IR2301  
www.irf.com  
1

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