Datasheet > IR2111STRPBF

IR2111STRPBF

更新时间： 2024-02-28 12:53:39

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动
页数	文件大小	规格书
15页	155K
描述
HALF-BRIDGE DRIVER

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数据手册

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IR2111STRPBF 数据手册

Data Sheet No. PD60028-M

(

) (

)

IR2111 S & PbF

HALF-BRIDGE DRIVER

Features

Product Summary

• Floating channel designed for bootstrap operation

600V max.

200 mA / 420 mA

10 - 20V

OFFSET

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

I +/-

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• CMOS Schmitt-triggered inputs with pull-down

• Matched propagation delay for both channels

• Internally set deadtime

OUT

(typ.)

750 & 150 ns

650 ns

on/off

• High side output in phase with input

• Also available LEAD-FREE

Deadtime (typ.)

Description

Packages

The IR2111(S) is a high voltage, high speed power

MOSFET and IGBT driver with dependent high and

low side referenced output channels designed for half-

bridge applications. Proprietary HVIC and latch

immune CMOS technologies enable ruggedized

monolithic construction. Logic input is compatible with

standard CMOS outputs. The output drivers feature a

high pulse current buffer stage designed for minimum

driver cross-conduction. Internal deadtime is provided

to avoid shoot-through in the output half-bridge. The

floating channel can be used to drive an N-channel

8-Lead PDIP

8-Lead SOIC

power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Typical Connection

up to 600V

V_CC

V_B

V_S

LOAD

COM

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections

only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com

12 3 4 5 6 7...15

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