Datasheet > IR2112-1PBF

IR2112-1PBF

更新时间： 2024-11-18 19:50:43

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动接口集成电路
页数	文件大小	规格书
18页	315K
描述
Half Bridge Based MOSFET Driver,

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技术参数
数据手册

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IR2112-1PBF 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.67	接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
Base Number Matches：	1

IR2112-1PBF 数据手册

Data Sheet No. PD60026 revS

( )( )

IR2112 -1-2 S PbF

HIGH AND LOW SIDE DRIVER

Features

Product Summary

• Floating channel designed for bootstrap operation

• Fully operational to +600V

600V max.

200 mA / 420 mA

10 - 20V

OFFSET

• Tolerant to negative transient voltage

dV/dt immune

I +/-

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V logic compatible

OUT

Separate logic supply range from 3.3V to 20V

Logic and power ground ±±V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs

(typ.)

12± & 10± ns

30 ns

on/off

Delay Matching

Packages

Description

The IR2112(S) is a high voltage, high speed power

MOSFET and IGBT driver with independent high and

low side referenced output channels. Proprietary HVIC

and latch immune CMOS technologies enable rugge-

dized monolithic construction. Logic inputs are com-

16-Lead SOIC (wide body)

14-Lead PDIP

patible with standard CMOS or LSTTL outputs, down to 3.3V logic.

The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Propagation delays are matched to simplify use in high frequency applications. The floating channel can be

used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600

volts.

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Typical Connection

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(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.

Please refer to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com

12 3 4 5 6 7...18

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