Datasheet > IR155BG12D

IR155BG12D

更新时间： 2024-11-12 21:02:35

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
2页	54K
描述
Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, DIE

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IR155BG12D 数据手册

Bulletin I0213J 12/01

IR155BG12DCB

PHASE CONTROL THYRISTORS

Junction Size:

Square 155 mils

Wafer Size:

V_RRMClass:

1200 V

Passivation Process:

Reference IR Packaged Part:

Glassivated MESA

16TTS Series

Major Ratings and Characteristics

Parameters

Units

1.4V

Test Conditions

V_TM

MaximumOn-stateVoltage

T_J= 25°C, I_T= 10 A

V_RRMReverseBreakdownVoltage

1200V

60 mA

2 V

T_J= 25°C, I_RRM= 100 µA

(1)

I_GT

V_GT

I_H

Max. Required DC Gate Current to Trigger

Max. Required DC Gate Voltage to Trigger

HoldingCurrentRange

T_J=25°C,anodesupply=6V,resistiveload

5 to 100 mA Anodesupply=6V, resistiveload

I_L

Maximum Latching Current

200 mA

Anodesupply=6V, resistiveload

(1) Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

100% Al, (20µm)

Nominal Front Metal Composition, Thickness

Chip Dimensions

155 x 155 mils (see drawing)

100 mm, with std. <110> flat

350 µm ± 10 µm

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

130 µm

Reject Ink Dot Size

0.25 mm diameter minimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer, indessicated

nitrogen,withnocontamination

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