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IR155DM16C PDF预览

IR155DM16C

更新时间: 2024-11-12 20:06:59
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
2页 56K
描述
Rectifier Diode, 1 Phase, 1 Element, 1600V V(RRM), Silicon, DIE

IR155DM16C 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIEReach Compliance Code:unknown
HTS代码:8541.10.00.40风险等级:5.5
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XUUC-N元件数量:1
相数:1封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1600 V表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IR155DM16C 数据手册

 浏览型号IR155DM16C的Datasheet PDF文件第2页 
Preliminary Data Sheet I0146J 02/02  
IR155DM16CCB SERIES  
STANDARD RECOVERY DIODES  
Junction Size:  
Wafer Size:  
Square 155 mils  
4"  
VRRM Class:  
1600 V  
Passivation Process:  
Glassivated MOAT  
Reference IR Packaged Part: 15ETS Series  
Major Ratings and Characteristics  
Parameters  
Units  
TestConditions  
VFM  
MaximumForwardVoltage  
1100 mV  
TJ = Amb., IF = 15 A  
VRRM ReverseBreakdownVoltageRange  
1600 V (*)  
TJ = Amb., IRRM = 50 µA  
(**)  
(*) Wafer and die Probe test clamped at 1200V to limit arcing. 1600V BV testable only in encapsulated packages  
(**) Nitrogen flow on die edge.  
Mechanical Characteristics  
Nominal Back Metal Composition, Thickness  
Nominal Front Metal Composition, Thickness  
ChipDimensions  
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)  
100% Al, (20 µm)  
155 x 155 mils (see drawing)  
100 mm, with std. < 110 > flat  
330 µm, ± 10 µm  
Wafer Diameter  
Wafer Thickness  
Maximum Width of Sawing Line  
110 µm  
Reject Ink Dot Size  
0.25 mm diameter minimum  
Seedrawing  
InkDotLocation  
RecommendedStorageEnvironment  
Storageinoriginalcontainer, indessicated  
nitrogen,withnocontamination  
1

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