Datasheet > IR135DM16CPBF

IR135DM16CPBF

更新时间： 2024-11-12 21:12:47

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
3页	153K
描述
Rectifier Diode, 1 Phase, 1 Element, 1600V V(RRM), Silicon, WAFER

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IR135DM16CPBF 数据手册

Bulletin I0115J 09/00

IR135DM16CCB

STANDARD RECOVERY DIODES

Junction Size:

Wafer Size:

Rectangular 135 x 100 mils

V_RRMClass:

1600 V

PassivationProcess:

Glassivated MOAT

Reference IR Packaged Part: 8EWS..S Series

Major Ratings and Characteristics

Parameters

Units

TestConditions

V_FM

MaximumForwardVoltage

1.15V

T_J=25°C, I_F=8A

V_RRMReverseBreakdownVoltage

(*) Nitrogen flow on die edge.

1600V (**)

T_J= 25°C, I_RRM= 100 µA

(*)

(**) WaferanddieProbetestclampedat1200Vtolimitarcing.1600V BVtestable only in encapsulated packages

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

NominalFrontMetalComposition,Thickness

ChipDimensions

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

100%Al,(5µm)

135 x 100 mils (see drawing)

100 mm, with std. < 110 > flat

330µm,±10µm

Wafer Diameter

WaferThickness

Maximum Width of Sawing Line

Reject Ink Dot Size

45µm

0.25mmdiameterminimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer, indessicated

nitrogen,withnocontamination

www.irf.com

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