是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, S-PDSO-N3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 16 weeks | 风险等级: | 1.71 |
雪崩能效等级(Eas): | 140 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 40 A | 最大漏源导通电阻: | 0.0036 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-PDSO-N3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 160 A |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPZ40N04S5-3R9 | INFINEON |
获取价格 |
车规级MOSFET | |
IPZ40N04S5-5R4 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 40V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me | |
IPZ40N04S55R4ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 40V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me | |
IPZ40N04S5-8R4 | INFINEON |
获取价格 |
N-channel - Enhancement mode - Normal Level | |
IPZ40N04S5-8R4_15 | INFINEON |
获取价格 |
N-channel - Enhancement mode - Normal Level | |
IPZ40N04S58R4ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 40V, 0.0099ohm, 1-Element, N-Channel, Silicon, Me | |
IPZ40N04S5L-2R8 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Me | |
IPZ40N04S5L2R8ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Me | |
IPZ40N04S5L-3R6 | INFINEON |
获取价格 |
本培训解释了TOLG的优势以及该封装的目标工业应用和汽车应用;并列出了当前可用的产品系列, | |
IPZ40N04S5L-4R8 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 40V, 0.0067ohm, 1-Element, N-Channel, Silicon, Me |