IPSH6N03LB

更新时间： 2024-01-07 02:29:37

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	312K
描述
OptiMOS㈢2 Power-Transistor

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数据手册

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IPSH6N03LB 数据手册

IPUH6N03LB

Values

typ.

IPSH6N03LB

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

SMD version, device on PCB

1.8

K/W

R _thJA

minimal footprint

6 cm²cooling area⁵⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSS

V _GS(th)

_GS=0 V, I _D=1 mA

_DS=V _GS, I _D=40 µA

Drain-source breakdown voltage

Gate threshold voltage

1.2

1.6

_DS=30 V, V _GS=0 V,

I _DSS

Zero gate voltage drain current

0.1

µA

T _j=25 °C

_DS=30 V, V _GS=0 V,

100

T _j=125 °C

I _GSS

_GS=20 V, V _DS=0 V

_GS=4.5 V, I _D=30 A

_GS=10 V, I _D=50 A

Gate-source leakage current

100 nA

R _DS(on)

7.4

9.3

mΩ

5.2

1.2

6.3

R _G

g _fs

Gate resistance

Ω

|V _DS|>2|I _D|R _DS(on)max

I _D=50 A

Transconductance

²⁾Current is limited by bondwire; with anR _thJC=1.8 K/W the chip is able to carry 86 A.

³⁾See figure 3

⁴⁾T _j,max=150 °C and duty cycle D <0.25 for V _GS<-5 V

⁵⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 0.3

page 2

2006-05-15

123 4 5 6 7...10

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