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IPP12CN10NGHKSA1 PDF预览

IPP12CN10NGHKSA1

更新时间: 2024-10-01 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 858K
描述
Power Field-Effect Transistor, 67A I(D), 100V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP12CN10NGHKSA1 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.72其他特性:FAST SWITCHING
雪崩能效等级(Eas):154 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):67 A
最大漏源导通电阻:0.0129 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):268 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPP12CN10NGHKSA1 数据手册

 浏览型号IPP12CN10NGHKSA1的Datasheet PDF文件第2页浏览型号IPP12CN10NGHKSA1的Datasheet PDF文件第3页浏览型号IPP12CN10NGHKSA1的Datasheet PDF文件第4页浏览型号IPP12CN10NGHKSA1的Datasheet PDF文件第5页浏览型号IPP12CN10NGHKSA1的Datasheet PDF文件第6页浏览型号IPP12CN10NGHKSA1的Datasheet PDF文件第7页 
IPB12CN10N G IPD12CN10N G  
IPI12CN10N G IPP12CN10N G  
OptiMOS2 Power-Transistor  
Features  
Product Summary  
VDS  
100  
12.4  
67  
V
• N-channel, normal level  
RDS(on),max (TO252)  
mW  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
ID  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
• Halogen-free according to IEC61249-2-21  
Type  
IPB12CN10N G  
IPD12CN10N G  
IPI12CN10N G  
IPP12CN10N G  
Package  
Marking  
PG-TO263-3  
12CN10N  
PG-TO252-3  
12CN10N  
PG-TO262-3  
12CN10N  
PG-TO220-3  
12CN10N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
67  
48  
A
Pulsed drain current2)  
I D,pulse  
E AS  
268  
154  
I D=67 A, R GS=25 W  
Avalanche energy, single pulse  
mJ  
I D=67 A, V DS=80 V,  
di /dt =100 A/µs,  
T j,max=175 °C  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
Gate source voltage3)  
V GS  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
125  
W
°C  
T j, T stg  
Operating and storage temperature  
-55 ... 175  
55/175/56  
IEC climatic category; DIN IEC 68-1  
1)J-STD20 and JESD22  
2) see figure 3  
3)  
T
=150°C and duty cycle D=0.01 for Vgs<-5V  
jmax  
Rev. 1.08  
page 1  
2013-07-09  

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