Datasheet > IPD60R1K5CE_16

IPD60R1K5CE_16

更新时间： 2022-02-26 12:06:44

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1554K
描述
600V CoolMOSÂª CE Power Transistor

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中文翻译

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数据手册

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IPD60R1K5CE_16 数据手册

600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor

IPD60R1K5CE,ꢀIPU60R1K5CE

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

3.2

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

0.09

0.6

I_D=0.6A; V_DD=50V; see table 11

E_AR

I_D=0.6A; V_DD=50V; see table 11

I_AR

dv/dt

V_GS

V/ns V_DS=0...480V

-20

-30

static;

AC (f>1 Hz)

Power dissipation

TO-251, TO252

P_tot

T_C=25°C

Storage temperature

T_stg

T_j

-40

150

3.5

°C

Operating junction temperature

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

V_DS=0...400V,ꢀI_SD<=I_S,ꢀT_j=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ

see table 9

Reverse diode dv/dt³⁾

dv/dt

di_f/dt

V/ns

V_DS=0...400V,ꢀI_SD<=I_S,ꢀT_j=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ

see table 9

Maximum diode commutation speed

500

A/µs

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀꢀTO-251,ꢀTO252

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

2.57

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W leaded

Soldering temperature, wavesoldering

only allowed at leads

T_sold

260

°C

1.6mm (0.063 in.) from case for 10s

¹⁾Limited by T_{j max}. Maximum duty cycle D=0.50

²⁾Pulse width t_plimited by T_j,max

³⁾ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀR_G

Final Data Sheet

2016-03-31

1 234 5 6 7...14

中文翻译

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