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IPD110N12N3G PDF预览

IPD110N12N3G

更新时间: 2024-01-16 00:22:40
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 324K
描述
OptiMOSTM3Power-Transistor

IPD110N12N3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.31雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:120 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
湿度敏感等级:3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):136 W最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPD110N12N3G 数据手册

 浏览型号IPD110N12N3G的Datasheet PDF文件第2页浏览型号IPD110N12N3G的Datasheet PDF文件第3页浏览型号IPD110N12N3G的Datasheet PDF文件第4页浏览型号IPD110N12N3G的Datasheet PDF文件第5页浏览型号IPD110N12N3G的Datasheet PDF文件第6页浏览型号IPD110N12N3G的Datasheet PDF文件第7页 
IPD110N12N3 G  
IPS110N12N3 G  
OptiMOSTM3Power-Transistor  
Features  
Product Summary  
V DS  
120  
11  
V
• N-channel, normal level  
R DS(on),max  
I D  
mΩ  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
75  
A
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant; halogen free  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPS110N12N3 G  
IPD110N12N3 G  
Package  
Marking  
PG-TO251-3  
110N12N  
PG-TO252-3  
110N12N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
Continuous drain current  
75  
54  
A
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
300  
I D=75 A, R GS=25 Ω  
Avalanche energy, single pulse  
120  
mJ  
V
Gate source voltage3)  
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
136  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) see figure 3  
3)  
T
jmax  
=150°C and duty cycle D=0.01 for Vgs<-5V  
Rev. 2.2  
page 1  
2009-07-09  

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