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INA-12063 PDF预览

INA-12063

更新时间: 2024-11-22 22:05:07
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体放大器晶体管
页数 文件大小 规格书
24页 347K
描述
1.5 GHz Low Noise Self-Biased Transistor Amplifier

INA-12063 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SSOP6,.08Reach Compliance Code:unknown
风险等级:5.73JESD-609代码:e0
安装特点:SURFACE MOUNT端子数量:6
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SSOP6,.08
电源:3 V子类别:RF/Microwave Amplifiers
最大压摆率:7 mA表面贴装:YES
技术:BIPOLAR端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

INA-12063 数据手册

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1.5 GHz Low Noise Self-Biased  
Transistor Amplifier  
Technical Data  
INA-12063  
Surface Mount Package  
SOT-363 (SC-70)  
Description  
Features  
Hewlett-Packard’s INA-12063 is a  
Silicon monolithic self-biased  
transistor amplifier that offers  
excellent gain and noise figure for  
applications to 1.5 GHz. Packaged  
in an ultra-miniature SOT-363  
package, it requires half the board  
space of a SOT-143 package.  
• Integrated, Active Bias  
Circuit  
• Single Positive Supply  
Voltage (1.5 – 5V)  
• Current Adjustable, 1 to  
10mA  
• 2 dB Noise Figure at  
900 MHz  
Pin Connections and  
Package Marking  
The INA-12063 is a unique RFIC  
that combines the performance  
flexibility of a discrete transistor  
with the simplicity of using an  
integrated circuit. Using a pat-  
ented bias circuit, the perfor-  
mance and operating current of  
the INA-12063 can be adjusted  
over the 1 to 10 mA range.  
• 16 dB Gain at 900 MHz  
25 dB Gain at 100 MHz  
RF OUTPUT  
I
1
6
and V  
bias  
C
Applications  
GND 2 2  
5 GND 1  
• Amplifier Applications for  
Cellular, Cordless, Special  
Mobile Radio, PCS, ISM,  
and Wireless LAN  
RF INPUT 3  
4 V  
d
Note:  
Applications  
The INA-12063 is fabricated using  
Package marking provides orientation  
and identification.  
HP’s 30 GHz f  
ISOSAT™  
MAX  
Equivalent Circuit  
(Simplified)  
Silicon bipolar process which  
uses nitride self-alignment  
submicrometer lithography,  
trench isolation, ion implantation,  
gold metalization, and polyimide  
intermetal dielectric and scratch  
protection to achieve superior  
performance, uniformity, and  
reliability.  
V
d
ACTIVE  
BIAS  
CIRCUIT  
GND 2  
I
bias  
RF  
OUTPUT  
and V  
RF  
c
INPUT  
RF  
FEEDBACK  
NETWORK  
GND 1  
6-116  
5965-5365E  

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