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INA-12063-BLK

更新时间： 2024-11-25 22:05:07

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体放大器晶体管
页数	文件大小	规格书
24页	347K
描述
1.5 GHz Low Noise Self-Biased Transistor Amplifier

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INA-12063-BLK 数据手册

1.5 GHz Low Noise Self-Biased

Transistor Amplifier

Technical Data

INA-12063

Surface Mount Package

SOT-363 (SC-70)

Description

Features

Hewlett-Packard’s INA-12063 is a

Silicon monolithic self-biased

transistor amplifier that offers

excellent gain and noise figure for

applications to 1.5 GHz. Packaged

in an ultra-miniature SOT-363

package, it requires half the board

space of a SOT-143 package.

• Integrated, Active Bias

Circuit

• Single Positive Supply

Voltage (1.5 – 5V)

• Current Adjustable, 1 to

10mA

• 2 dB Noise Figure at

900 MHz

Pin Connections and

Package Marking

The INA-12063 is a unique RFIC

that combines the performance

flexibility of a discrete transistor

with the simplicity of using an

integrated circuit. Using a pat-

ented bias circuit, the perfor-

mance and operating current of

the INA-12063 can be adjusted

over the 1 to 10 mA range.

• 16 dB Gain at 900 MHz

25 dB Gain at 100 MHz

RF OUTPUT

and V

bias

Applications

GND 2 2

5 GND 1

• Amplifier Applications for

Cellular, Cordless, Special

Mobile Radio, PCS, ISM,

and Wireless LAN

RF INPUT 3

4 V

Note:

Applications

The INA-12063 is fabricated using

Package marking provides orientation

and identification.

HP’s 30 GHz f

ISOSAT™

MAX

Equivalent Circuit

(Simplified)

Silicon bipolar process which

uses nitride self-alignment

submicrometer lithography,

trench isolation, ion implantation,

gold metalization, and polyimide

intermetal dielectric and scratch

protection to achieve superior

performance, uniformity, and

reliability.

ACTIVE

BIAS

CIRCUIT

GND 2

bias

OUTPUT

and V

INPUT

FEEDBACK

NETWORK

GND 1

6-116

5965-5365E

12 3 4 5 6 7...24

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