Datasheet > IKQ50N120CH3

IKQ50N120CH3

更新时间： 2023-12-06 20:11:33

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
16页	1627K
描述
IGBT HighSpeed 3

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IKQ50N120CH3 数据手册

IKQ50N120CH3

HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

240

3.50

34.0

µC

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ600V,

I_Fꢀ=ꢀ50.0A,

di_F/dtꢀ=ꢀ1200A/µs

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-403

A/µs

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ175°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

T_vjꢀ=ꢀ175°C,

V_CCꢀ=ꢀ600V,ꢀI_Cꢀ=ꢀ50.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ10.0Ω,ꢀR_G(off)ꢀ=ꢀ10.0Ω,

Lσꢀ=ꢀ90nH,ꢀCσꢀ=ꢀ67pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

400

Turn-on energy

E_on

E_off

E_ts

5.30

4.10

9.40

Turn-off energy

Total switching energy

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ175°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

390

8.60

46.0

µC

T_vjꢀ=ꢀ175°C,

V_Rꢀ=ꢀ600V,

I_Fꢀ=ꢀ50.0A,

Q_rr

Diode peak reverse recovery current I_rrm

di_F/dtꢀ=ꢀ1200A/µs

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-210

A/µs

Datasheet

Vꢀ2.4

2019-04-15

1 2 3 456 7 8...16

中文翻译

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