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IKQ75N120CH7 PDF预览

IKQ75N120CH7

更新时间: 2023-09-03 20:39:25
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
17页 1600K
描述
TRENCHSTOP™ IGBT7

IKQ75N120CH7 数据手册

 浏览型号IKQ75N120CH7的Datasheet PDF文件第2页浏览型号IKQ75N120CH7的Datasheet PDF文件第3页浏览型号IKQ75N120CH7的Datasheet PDF文件第4页浏览型号IKQ75N120CH7的Datasheet PDF文件第5页浏览型号IKQ75N120CH7的Datasheet PDF文件第6页浏览型号IKQ75N120CH7的Datasheet PDF文件第7页 
IKQ75N120CH7  
High speed 1200 V TRENCHSTOP IGBT 7 Technology  
High speed 1200 V TRENCHSTOP IGBT 7 Technology co-packed with full rated current, soft-ommuꢀaꢀing,  
ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode  
Features  
• VCE = 1200 V  
• IC = 75 A  
• Maximum junction temperature Tvjmax = 175°C  
• Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-ommuꢀaꢀing  
high speed diode  
• Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C  
• Optimized for high effi-ien-y in high speed hard switching topologies (2-L inverter, 3-L NPC  
T-type, ...)  
• Easy paralleling capability due to positive temperature -oeffi-ienꢀ in VCEsat  
• Pb-free lead plating; RoHS compliant  
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/  
Potential applications  
• Industrial UPS  
• EV-Charging  
• String inverter  
• Welding  
Product validation  
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22  
Description  
C
G
E
Type  
Package  
Marking  
IKQ75N120CH7  
PG-TO247-3-PLUS-NN3.7  
K75MCH7  
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 1.10  
2023-01-20  

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