Datasheet > IKQ50N120CH3

IKQ50N120CH3

更新时间： 2023-12-06 20:11:33

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
16页	1627K
描述
IGBT HighSpeed 3

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IKQ50N120CH3 数据手册

IKQ50N120CH3

HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

StaticꢀCharacteristic

Collector-emitter breakdown voltage V_(BR)CESV_GEꢀ=ꢀ0V,ꢀI_Cꢀ=ꢀ0.50mA

V_GEꢀ=ꢀ15.0V,ꢀI_Cꢀ=ꢀ50.0A

1200

Collector-emitter saturation voltage V_CEsat

T_vjꢀ=ꢀ25°C

2.00 2.35

2.50

T_vjꢀ=ꢀ175°C

V_GEꢀ=ꢀ0V,ꢀI_Fꢀ=ꢀ50.0A

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Diode forward voltage

V_F

1.90 2.30

1.85

Gate-emitter threshold voltage

V_GE(th)

I_Cꢀ=ꢀ1.70mA,ꢀV_CEꢀ=ꢀV_GE

5.1

5.8

6.5

V_CEꢀ=ꢀ1200V,ꢀV_GEꢀ=ꢀ0V

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Zero gate voltage collector current I_CES

350

µA

4000

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CEꢀ=ꢀ0V,ꢀV_GEꢀ=ꢀ20V

V_CEꢀ=ꢀ20V,ꢀI_Cꢀ=ꢀ50.0A

100

17.0

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

DynamicꢀCharacteristic

Input capacitance

C_ies

3269

355

Output capacitance

C_oes

C_res

V_CEꢀ=ꢀ25V,ꢀV_GEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz

Reverse transfer capacitance

199

V_CCꢀ=ꢀ960V,ꢀI_Cꢀ=ꢀ40.0A,

V_GEꢀ=ꢀ15V

Gate charge

Q_G

L_E

235.0

13.0

Internal emitter inductance

measured 5mm (0.197 in.) from

case

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

T_vjꢀ=ꢀ25°C,

V_CCꢀ=ꢀ600V,ꢀI_Cꢀ=ꢀ50.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ10.0Ω,ꢀR_G(off)ꢀ=ꢀ10.0Ω,

Lσꢀ=ꢀ90nH,ꢀCσꢀ=ꢀ67pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

297

Turn-on energy

E_on

E_off

E_ts

3.00

1.90

4.90

Turn-off energy

Total switching energy

Datasheet

Vꢀ2.4

2019-04-15

1 2 345 6 7...16

中文翻译

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