Datasheet > IKP20N60TA

IKP20N60TA

更新时间： 2024-11-06 21:19:43

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
13页	559K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IKP20N60TA 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.59
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IKP20N60TA 数据手册

IKP20N60T

TRENCHSTOP™ Series

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,

fast recovery anti-parallel Emitter Controlled HE diode

Features:



Very low V_CE(sat)1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5s

Designed for :

- Frequency Converters

- Uninterrupted Power Supply



TRENCHSTOP™ and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

PG-TO220-3

- low V_CE(sat)



Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_CV_{CE(sat),Tj=25°C}

1.5V

T_j,max

Marking

Package

IKP20N60T

600V 20A

K20T60

PG-TO220-3

175C

Maximum Ratings

Parameter

Symbol

V_{C E}

Value

Unit

Collector-emitter voltage, T_j≥ 25C

600

DC collector current, limited by T_jmax

T_C= 25C

T_C= 100C

I_C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area, V_CE= 600V, T_j= 175C, t_p= 1µs

Diode forward current, limited by T_jmaxT_C= 25C

T_C= 100C

I_{Cp ul s}

I_F

Diode pulsed current, t_plimited by T_jmax

I_{Fp ul s}

V_{G E}

Gate-emitter voltage

Short circuit withstand time²⁾

20

t_SC

s

V_GE= 15V, V_CC 400V, T_j 150C

Power dissipation T_C= 25C

P_{t ot}

T_j

166

Operating junction temperature

-40...+175

-55...+150

260

Storage temperature

T_{st g}

C

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.7 20.09.2013

IFAG IPC TD VLS

12 3 4 5 6 7...13

中文翻译

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与IKP20N60TA相关器件

型号	品牌	获取价格	描述	数据表
IKP20N60TAHKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
IKP20N60TXKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PL
IKP20N65F5	INFINEON	获取价格	IGBT TRENCHSTOP™ 5
IKP20N65F5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
IKP20N65H5	INFINEON	获取价格	IGBT TRENCHSTOP? 5
IKP28N65ES5	INFINEON	获取价格	IGBT TRENCHSTOP? 5
IKP30N65F5	INFINEON	获取价格	IGBT TRENCHSTOP™ 5
IKP30N65H5	INFINEON	获取价格	IGBT TRENCHSTOP? 5
IKP39N65ES5	INFINEON	获取价格	IGBT TRENCHSTOP? 5
IKP40N65F5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation

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