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IHP10T120 PDF预览

IHP10T120

更新时间: 2024-11-23 21:53:23
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管双极性晶体管
页数 文件大小 规格书
14页 335K
描述
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

IHP10T120 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
外壳连接:COLLECTOR最大集电极电流 (IC):16 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):138 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):769 ns
标称接通时间 (ton):69 nsBase Number Matches:1

IHP10T120 数据手册

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IHP10T120  
Soft Switching Series  
Low Loss DuoPack : IGBT in Trench and Fieldstop technology  
with soft, fast recovery anti-parallel EmCon HE diode  
Short circuit withstand time – 10µs  
Designed for :  
- Soft Switching Applications  
- Induction Heating  
C
E
Trench and Fieldstop technology for 1200 V applications offers :  
- very tight parameter distribution  
- high ruggedness, temperature stable behavior  
- easy parallel switching capability due to positive  
temperature coefficient in VCE(sat)  
G
P-TO-220-3-1  
(TO-220AB)  
- Very low Vce(sat)  
Very soft, fast recovery anti-parallel EmConHE diode  
Low EMI  
Application specific optimisation of inverse diode  
Type  
VCE  
IC  
VCE(sat),Tj=25°C  
Tj,max  
Marking  
Package  
Ordering Code  
IHP10T120  
1200V  
10A  
1.7V  
H10T120  
TO-220-3-1 Q67040-S4650  
150°C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current  
TC = 25°C  
VCE  
IC  
1200  
V
A
16  
10  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
Turn off safe operating area  
ICpuls  
-
24  
24  
V
CE 1200V, Tj 150°C  
Diode forward current  
IF  
11  
7
TC = 25°C  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax, Tc = 25°C  
IFpuls  
IFSM  
16.5  
Diode surge non repetitive current, tp limited by Tjmax  
TC = 25°C, tp = 10ms, sine halfwave  
TC = 25°C, tp 2.5µs, sine halfwave  
TC = 100°C, tp 2.5µs, sine halfwave  
Gate-emitter voltage  
A
28  
50  
40  
VGE  
tSC  
V
±20  
10  
Short circuit withstand time1)  
µs  
V
GE = 15V, VCC 1200V, Tj 150°C  
Ptot  
Tj  
Tstg  
-
138  
W
Power dissipation, TC = 25°C  
Operating junction temperature  
Storage temperature  
Soldering temperature, 1.6mm (0.063 in.) from case for 10s  
-40...+150  
-55...+150  
260  
°C  
1) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2 Jun-04  
Power Semiconductors  

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