Datasheet > IHP10T120_07

IHP10T120_07

更新时间： 2024-11-24 05:39:11

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
14页	372K
描述
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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IHP10T120_07 数据手册

IHP10T120

Soft Switching Series

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Short circuit withstand time – 10µs

Designed for :

- Soft Switching Applications

- Induction Heating

•

TrenchStop^®and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- easy parallel switching capability due to positive

temperature coefficient in V_CE(sat)

- Very low V_ce(sat)

PG-TO-220-3-1

•

Very soft, fast recovery anti-parallel EmCon^™HE diode

Low EMI

Qualified according to JEDEC¹for target applications

Application specific optimisation of inverse diode

Pb-free lead plating; RoHS compliant

Type

V_CE

I_CV_{CE(sat),Tj=25°C}

1.7V

T_j,max

Marking

Package

IHP10T120

1200V 10A

H10T120

PG-TO-220-3-1

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V_CE

I_C

1200

DC collector current

T_C= 25°C

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

Turn off safe operating area

_CE≤ 1200V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax, T_c= 25°C

Diode surge non repetitive current, t_plimited by T_jmax

T_C= 25°C, t_p= 10ms, sine halfwave

T_C= 25°C, t_p≤ 2.5µs, sine halfwave

T_C= 100°C, t_p≤ 2.5µs, sine halfwave

Gate-emitter voltage

I_Fpuls

I_FSM

16.5

V_GE

t_SC

±20

Short circuit withstand time²⁾

µs

_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

P_tot

T_j

T_stg

138

Power dissipation, T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+150

-55...+150

260

°C

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.4 Sept. 07

Power Semiconductors

12 3 4 5 6 7...14

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