5秒后页面跳转
IDT7M1014S25G PDF预览

IDT7M1014S25G

更新时间: 2024-02-26 18:11:27
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
8页 89K
描述
4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE

IDT7M1014S25G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:PGA
包装说明:CERAMIC, PGA-142针数:142
Reach Compliance Code:not_compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.92
Is Samacsys:N最长访问时间:25 ns
I/O 类型:COMMONJESD-30 代码:S-CPGA-P142
JESD-609代码:e0长度:34.036 mm
内存密度:147456 bit内存集成电路类型:MULTI-PORT SRAM MODULE
内存宽度:36功能数量:1
端口数量:2端子数量:142
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4KX36
输出特性:3-STATE可输出:YES
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:PGA
封装等效代码:PGA142,13X13封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883 Class B (Modified)
座面最大高度:6.223 mm子类别:SRAMs
最大压摆率:1.04 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:BICMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:34.036 mmBase Number Matches:1

IDT7M1014S25G 数据手册

 浏览型号IDT7M1014S25G的Datasheet PDF文件第2页浏览型号IDT7M1014S25G的Datasheet PDF文件第3页浏览型号IDT7M1014S25G的Datasheet PDF文件第4页浏览型号IDT7M1014S25G的Datasheet PDF文件第5页浏览型号IDT7M1014S25G的Datasheet PDF文件第6页浏览型号IDT7M1014S25G的Datasheet PDF文件第7页 
IDT7M1014  
4K x 36  
BiCMOS DUAL-PORT  
STATIC RAM MODULE  
Integrated Device Technology, Inc.  
DESCRIPTION  
FEATURES  
The IDT7M1014 is a 4K x 36 asynchronous high-speed  
BiCMOS Dual-Port static RAM module constructed on a co-  
fired ceramic substrate using 4 IDT7014 (4K x 9) asynchro-  
nous Dual-Port RAMs. The IDT7M1014 module is designed  
to be used as stand-alone 36-bit dual-port RAM.  
This module provides two independent ports with separate  
control, address, and I/O pins that permit independent and  
asynchronous access for reads or writes to any location in  
memory.  
TheIDT7M1014moduleispackagedina142-leadceramic  
PGA (Pin Grid Array). Maximum access times as fast as 15ns  
and 25ns are available over the commercial and military  
temperature ranges respectively.  
• High-density 4K x 36 BiCMOS Dual-Port Static RAM  
module  
• Fast access times  
— Commercial: 15, 20ns  
— Military: 25, 30ns  
• Fully asynchronous read/write operation from either port  
• Surface mounted LCC packages allow through-hole  
module to fit on a ceramic PGA footprint  
• Single 5V (±10%) power supply  
• Multiple GND pins and decoupling capacitors for maxi-  
mum noise immunity  
• Inputs/outputs directly TTL-compatible  
All IDT military modules are constructed with semiconduc-  
tor components manufactured in compliance with the latest  
revision of MIL-STD-883, Class B making them ideally suited  
to applications demanding the highest level of performance  
and reliability.  
FUNCTIONAL BLOCK DIAGRAM  
L_A0 – 11  
L_I/O0 – 8  
R_A0 – 11  
R_I/O0 – 8  
IDT7014  
4K x 9  
R_OE  
L
L_OE  
L
L_R/W  
0
R_R/W  
0
L_I/O9 – 17  
R_I/O9 – 17  
IDT7014  
4K x 9  
L_R/W  
1
R_R/W  
1
L_I/O18 – 26  
R_I/O18 – 26  
IDT7014  
4K x 9  
R_OE  
H
L_OE  
H
L_R/W  
2
R_R/W  
2
L_I/O27 – 35  
R_I/O27 – 35  
IDT7014  
4K x 9  
L_R/W  
3
R_R/W  
3
2819 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
DECEMBER 1995  
©1996 Integrated Device Technology, Inc.  
DSC-2819/4  
7.03  
1

与IDT7M1014S25G相关器件

型号 品牌 获取价格 描述 数据表
IDT7M1014S25GB IDT

获取价格

4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE
IDT7M1014S30G IDT

获取价格

4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE
IDT7M1014S30GB IDT

获取价格

4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE
IDT7M1014S35G ETC

获取价格

x36 Dual-Port SRAM Module
IDT7M1014S35GB ETC

获取价格

x36 Dual-Port SRAM Module
IDT7M1024 IDT

获取价格

4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE
IDT7M1024S15G ETC

获取价格

x36 Dual-Port SRAM Module
IDT7M1024S20G IDT

获取价格

4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE
IDT7M1024S20GB IDT

获取价格

4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE
IDT7M1024S25G IDT

获取价格

4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE