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IDT7203L25JG8 PDF预览

IDT7203L25JG8

更新时间: 2024-11-05 13:51:55
品牌 Logo 应用领域
艾迪悌 - IDT 先进先出芯片
页数 文件大小 规格书
14页 147K
描述
FIFO, 2KX9, 25ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32

IDT7203L25JG8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFJ
包装说明:QCCJ,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.09
最长访问时间:25 ns其他特性:RETRANSMIT
周期时间:35 nsJESD-30 代码:R-PQCC-J32
JESD-609代码:e3长度:13.97 mm
内存密度:18432 bit内存宽度:9
功能数量:1端子数量:32
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2KX9
输出特性:3-STATE可输出:NO
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:3.55 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:11.43 mm
Base Number Matches:1

IDT7203L25JG8 数据手册

 浏览型号IDT7203L25JG8的Datasheet PDF文件第2页浏览型号IDT7203L25JG8的Datasheet PDF文件第3页浏览型号IDT7203L25JG8的Datasheet PDF文件第4页浏览型号IDT7203L25JG8的Datasheet PDF文件第5页浏览型号IDT7203L25JG8的Datasheet PDF文件第6页浏览型号IDT7203L25JG8的Datasheet PDF文件第7页 
IDT7203  
IDT7204  
IDT7205  
IDT7206  
IDT7207  
IDT7208  
CMOS ASYNCHRONOUS FIFO  
2,048 x 9, 4,096 x 9  
8,192 x 9, 16,384 x 9  
32,768 x 9 and 65,536 x 9  
Industrial temperature range (–40  
(plastic packages only)  
°C to +85°C) is available  
FEATURES:  
First-In/First-Out Dual-Port memory  
2,048 x 9 organization (IDT7203)  
4,096 x 9 organization (IDT7204)  
DESCRIPTION:  
8,192 x 9 organization (IDT7205)  
TheIDT7203/7204/7205/7206/7207/7208aredual-portmemorybuffers  
withinternalpointersthatloadandemptydataonafirst-in/first-outbasis. The  
deviceusesFullandEmptyflagstopreventdataoverflowandunderflowand  
expansionlogictoallowforunlimitedexpansioncapabilityinbothwordsizeand  
depth.  
DataistoggledinandoutofthedevicethroughtheuseoftheWrite(W)and  
Read (R) pins.  
The device's 9-bit width provides a bit for a control or parity at the users  
option. ItalsofeaturesaRetransmit(RT)capabilitythatallowsthereadpointer  
to be reset to its initial position when RT is pulsed LOW. A Half-Full Flag is  
available inthe single device andwidthexpansionmodes.  
These FIFOs are fabricatedusingIDT’s high-speedCMOStechnology.  
Theyaredesignedforapplicationsrequiringasynchronousandsimultaneous  
read/writesinmultiprocessing,ratebufferingandotherapplications.  
Militarygradeproductismanufacturedincompliancewiththelatestrevision  
of MIL-STD-883, Class B.  
16,384 x 9 organization (IDT7206)  
32,768 x 9 organization (IDT7207)  
65,636 x 9 organization (IDT7208)  
High-speed: 12ns access time  
Low power consumption  
Active: 660mW (max.)  
— Power-down: 44mW (max.)  
Asynchronous and simultaneous read and write  
Fully expandable in both word depth and width  
Pin and functionally compatible with IDT720X family  
Status Flags: Empty, Half-Full, Full  
Retransmit capability  
High-performance CMOS technology  
Military product compliant to MIL-STD-883, Class B  
Standard Military Drawing for #5962-88669 (IDT7203), 5962-89567  
(IDT7203), and 5962-89568 (IDT7204) are listed on this function  
FUNCTIONAL BLOCK DIAGRAM  
DATA INPUTS  
)
8
0
(D -D  
WRITE  
CONTROL  
W
RAM ARRAY  
2,048 x 9  
4,096 x 9  
8,192 x 9  
16,384 x 9  
32,768 x 9  
65,536 x 9  
WRITE  
POINTER  
READ  
POINTER  
THREE-  
STATE  
BUFFERS  
RS  
DATA OUTPUTS  
READ  
CONTROL  
)
8
(Q0-Q  
RESET  
LOGIC  
R
FLAG  
LOGIC  
EF  
FF  
FL/RT  
EXPANSION  
LOGIC  
XO/HF  
XI  
2661 drw01  
IDTandtheIDTlogoareregisteredtrademarksofIntegratedDeviceTechnology,Inc.  
COMMERCIAL,MILITARYANDINDUSTRIALTEMPERATURERANGES  
SEPTEMBER 2002  
1
2002 Integrated Device Technology, Inc. All rights reserved. Product subject to change without notice.  
DSC-2661/13  

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