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IDT71V3579YS85BQ

更新时间： 2024-10-29 10:33:03
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
22页 236K
描述
Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA165, FBGA-165

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IDT71V3579YS85BQ 数据手册

 浏览型号IDT71V3579YS85BQ的Datasheet PDF文件第1页浏览型号IDT71V3579YS85BQ的Datasheet PDF文件第2页浏览型号IDT71V3579YS85BQ的Datasheet PDF文件第3页浏览型号IDT71V3579YS85BQ的Datasheet PDF文件第5页浏览型号IDT71V3579YS85BQ的Datasheet PDF文件第6页浏览型号IDT71V3579YS85BQ的Datasheet PDF文件第7页 
IDT71V3577YS_79YS, IDT71V3577YSA_79YSA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with  
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges  
AbsoluteMaximumRatings(1)  
RecommendedOperating  
TemperatureSupplyVoltage  
Commercial &  
Symbol  
Rating  
Unit  
Industrial Values  
Grade  
Temperature(1)  
0°C to +70°C  
-40°C to +85°C  
V
SS  
VDD  
VDDQ  
(2)  
V
TERM  
Terminal Voltage with  
Respect to GND  
-0.5 to +4.6  
V
Commercial  
Industrial  
0V  
0V  
3.3V±5%  
3.3V±5%  
3.3V±5%  
3.3V±5%  
(3,6)  
(4,6)  
(5,6)  
V
TERM  
Terminal Voltage with  
Respect to GND  
-0.5 to VDD  
-0.5 to VDD +0.5  
-0.5 to VDDQ +0.5  
-0 to +70  
V
V
6450 tbl 04  
NOTES:  
1. TA is the "instant on" case temperature.  
VTERM  
Terminal Voltage with  
Respect to GND  
VTERM  
Terminal Voltage with  
Respect to GND  
V
RecommendedDCOperating  
Conditions  
Commercial  
oC  
oC  
oC  
oC  
W
Symbol  
Parameter  
Min. Typ.  
3.135 3.3  
3.135 3.3  
Max.  
Unit  
V
Operating Temperature  
T (7)  
A
VDD  
Core Supply Voltage  
3.465  
3.465  
0
Industrial  
-40 to +85  
Operating Temperature  
VDDQ I/O Supply Voltage  
V
Temperature  
Under Bias  
-55 to +125  
TBIAS  
V
SS  
IH  
IH  
IL  
Supply Voltage  
0
0
V
____  
V
Input High Voltage - Inputs  
Input High Voltage -I/O  
Input Low Voltage  
2.0  
VDD +0.3  
V
Storage  
-55 to +125  
TSTG  
V
2.0  
V
DDQ +0.3(1)  
0.8  
V
____  
____  
Temperature  
V
-0.3(2)  
V
P
T
Power Dissipation  
DC Output Current  
2.0  
50  
6450 tbl 06  
NOTES:  
IOUT  
mA  
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.  
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.  
6450 tbl 03  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VDD terminals only.  
3. VDDQ terminals only.  
4. Input terminals only.  
5. I/O terminals only.  
6. This is a steady-state DC parameter that applies after the power supplies have  
ramped up. Power supply sequencing is not necessary; however, the voltage  
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.  
7. TA is the "instant on" case temperature.  
100PinTQFPCapacitance  
119BGACapacitance  
(TA = +25° C, f = 1.0mhz)  
(TA = +25° C, f = 1.0mhz)  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
IN = 3dV  
OUT = 3dV  
Max. Unit  
Symbol  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
IN = 3dV  
Max. Unit  
Symbol  
CIN  
V
5
7
pF  
CIN  
V
7
7
pF  
CI/O  
V
pF  
CI/O  
VOUT = 3dV  
pF  
6450 tbl 07  
6450 tbl 07a  
165fBGACapacitance  
(TA = +25° C, f = 1.0mhz)  
Symbol  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
IN = 3dV  
Max. Unit  
CIN  
V
7
7
pF  
CI/O  
VOUT = 3dV  
pF  
6450 tbl 07b  
NOTE:  
1. This parameter is guaranteed by device characterization, but not production tested.  
6.442  
1234567...22

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与IDT71V3579YS85BQ相关器件

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IDT71V3579YS85BQGI IDT

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IDT71V3579YS85BQI IDT

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IDT71V3579YS85BQI8 IDT

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 		Standard SRAM, 256KX18, 8.5ns, CMOS, PBGA165
IDT71V3579YS85PF IDT

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 		Cache SRAM, 256KX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100
IDT71V3579YS85PFG IDT

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 		128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,
IDT71V3579YS85PFGI IDT

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 		128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,
IDT71V3579YS85PFGI8 IDT

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 		Standard SRAM, 256KX18, 8.5ns, CMOS, PQFP100
IDT71V3579YS85PFI8 IDT

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 		Standard SRAM, 256KX18, 8.5ns, CMOS, PQFP100
IDT71V3579YSA65BG IDT

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