是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | QCCJ, LDCC52,.8SQ |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.28 |
Is Samacsys: | N | 最长访问时间: | 35 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-PQCC-J52 |
JESD-609代码: | e3 | 内存密度: | 16384 bit |
内存集成电路类型: | MULTI-PORT SRAM | 内存宽度: | 8 |
湿度敏感等级: | 1 | 端口数量: | 2 |
端子数量: | 52 | 字数: | 2048 words |
字数代码: | 2000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 2KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCJ |
封装等效代码: | LDCC52,.8SQ | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 电源: | 3.3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.0015 A |
最小待机电流: | 2 V | 子类别: | SRAMs |
最大压摆率: | 0.095 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT71V321L35JGI | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 35ns, CMOS, PQCC52 | |
IDT71V321L35JI | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V321L35JI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 35ns, CMOS, PQCC52 | |
IDT71V321L35PF | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V321L35PF8 | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, TQFP-64 | |
IDT71V321L35PFG | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 35ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64 | |
IDT71V321L35PFG8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64 | |
IDT71V321L35PFI | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V321L35PFI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64 | |
IDT71V321L35TF | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT |