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IDT71V2557S85PF9 PDF预览

IDT71V2557S85PF9

更新时间: 2024-11-17 04:37:11
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
28页 993K
描述
ZBT SRAM, 128KX36, 8.5ns, CMOS, PQFP100, PLASTIC, TQFP-100

IDT71V2557S85PF9 数据手册

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128K x 36, 256K x 18,  
IDT71V2557S  
IDT71V2559S  
IDT71V2557SA  
IDT71V2559SA  
3.3V Synchronous ZBT™ SRAMs  
2.5V I/O, Burst Counter,  
Flow-Through Outputs  
Features  
it read or write.  
128K x 36, 256K x 18 memory configurations  
Supports high performance system speed - 100 MHz  
(7.5 ns Clock-to-Data Access)  
The IDT71V2557/59 contain address, data-in and control signal  
registers.Theoutputsareflow-through(nooutputdataregister).Output  
enable is the only asynchronous signal and can be used to disable the  
outputsatanygiventime.  
A Clock Enable (CEN) pin allows operation of the IDT71V2557/59  
to be suspended as long as necessary. All synchronous inputs are  
ignored when (CEN) is high and the internal device registers will hold  
their previous values.  
There are three chip enable pins (CE1, CE2, CE2) that allow the  
usertodeselectthedevicewhendesired.Ifanyoneofthesethreeisnot  
assertedwhenADV/LDislow,nonewmemoryoperationcanbeinitiated.  
However,anypendingdatatransfers(readsorwrites)willbecompleted.  
Thedatabuswilltri-stateonecycleafterthechipisdeselectedorawrite  
isinitiated.  
The IDT71V2557/59 have an on-chip burst counter. In the burst  
mode, the IDT71V2557/59 can provide four cycles of data for a single  
address presented to the SRAM. The order of the burst sequence is  
defined by the LBO input pin. The LBO pin selects between linear and  
interleaved burst sequence. The ADV/LD signal is used to load a new  
external address (ADV/LD = LOW) or increment the internal burst  
counter (ADV/LD = HIGH).  
ZBTTM Feature - No dead cycles between write and read  
cycles  
Internally synchronized output buffer enable eliminates the  
need to control OE  
Single R/W (READ/WRITE) control pin  
4-word burst capability (Interleaved or linear)  
Individual byte write (BW1 - BW4) control (May tie active)  
Three chip enables for simple depth expansion  
3.3V power supply (±5%), 2.5V (±5%)I/O Supply (VDDQ)  
Optional-Boundary Scan JTAG Interface (IEEE 1149.1  
complaint)  
Packaged in a JEDEC Standard 100-pin plastic thin quad  
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch  
ball grid array (fBGA)  
Description  
TheIDT71V2557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-  
bit)synchronousSRAMsorganizedas128Kx36/256Kx18.Theyare  
designed to eliminate dead bus cycles when turning the bus around  
between reads and writes, or writes and reads. Thus they have been  
given the name ZBTTM, or Zero Bus Turnaround.  
The IDT71V2557/59 SRAMs utilize IDT's latest high-performance  
CMOSprocessandarepackagedinaJEDECstandard14mmx20mm  
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball  
grid array (BGA) and a 165 fine pitch ball grid array (fBGA).  
AddressandcontrolsignalsareappliedtotheSRAMduringoneclock  
cycle,andonthenextclockcycletheassociateddatacycleoccurs,be  
PinDescriptionSummary  
A0-A17  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Output  
Input  
Input  
I/O  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
N/A  
Chip Enables  
CE1, CE2, CE2  
Output Enable  
OE  
R/W  
Read/Write Signal  
Clock Enable  
CEN  
Individual Byte Write Selects  
Clock  
BW1, BW2, BW3, BW4  
CLK  
ADV/LD  
Advance burst address / Load new address  
Linear / Interleaved Burst Order  
Test Mode Select  
Te s t Data Input  
Synchronous  
Static  
LBO  
TMS  
Synchronous  
Synchronous  
N/A  
TDI  
TCK  
Te s t Clo c k  
TDO  
Test Data Output  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Static  
JTAG Reset (Optional)  
Sleep Mode  
TRST  
ZZ  
I/O0-I/O31, I/OP1-I/OP4  
VDD, VDDQ  
Data Input / Output  
Core Power, I/O Power  
Ground  
Supply  
Supply  
VSS  
Static  
4878 tbl 01  
OCTOBER 2004  
1
©2004IntegratedDeviceTechnology,Inc.  
DSC-4878/07  

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