IDT71V124SA20YI PDF预览

IDT71V124SA20YI

更新时间: 2025-09-18 19:18:23
品牌 Logo 应用领域
瑞萨 - RENESAS 存储
页数 文件大小 规格书
8页 115K
描述
存储容量(Mb):1Mb(128K x 8);内存数据长度(bit):128K ;字编码数(k):128K ;元器件封装:32-SOJ;

IDT71V124SA20YI 数据手册

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3.3V CMOS Static RAM  
1 Meg (128K x 8-Bit)  
Center Power &  
IDT71V124SA/HSA  
Ground Pinout  
Features  
Description  
128K x 8 advanced high-speed CMOS static RAM  
JEDEC revolutionary pinout (center power/GND) for  
reduced noise  
TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganized  
as128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliability  
CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-  
vativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-  
speedmemoryneeds. The JEDECcenterpower/GNDpinoutreduces  
noisegenerationandimprovessystemperformance.  
Equal access and cycle times  
– Commercial:10/12/15/20ns  
Industrial:10/12/15/20ns  
One Chip Select plus one Output Enable pin  
Inputs and outputs are LVTTL-compatible  
Single 3.3V supply  
Low power consumption via chip deselect  
Available in a 32-pin 300- and 400-mil Plastic SOJ, and  
32-pin Type II TSOP packages.  
TheIDT71V124has anoutputenablepinwhichoperates as fastas  
5ns, with address access times as fast as 9ns available. All bidirec-  
tionalinputs andoutputs oftheIDT71V124areLVTTL-compatibleand  
operation is from a single 3.3V supply. Fully static asynchronous  
circuitry is used; no clocks or refreshes are required for operation.  
FunctionalBlockDiagram  
A0  
1,048,576-BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A16  
8
8
I/O0 - I/O7  
I/O CONTROL  
.
8
WE  
OE  
CS  
CONTROL  
LOGIC  
3873 drw 01  
OCTOBER 2008  
1
DSC-3873/09  
©2007-IntegratedDeviceTechnology,Inc.  

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