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IDT7134SA55FGB8 PDF预览

IDT7134SA55FGB8

更新时间: 2024-11-15 19:42:11
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
11页 99K
描述
Multi-Port SRAM, 4KX8, 55ns, CMOS, CQFP48

IDT7134SA55FGB8 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:QFF, QFL48,.75SQ
Reach Compliance Code:compliant风险等级:5.22
Is Samacsys:N最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:S-XQFP-F48
JESD-609代码:e3内存密度:32768 bit
内存集成电路类型:MULTI-PORT SRAM内存宽度:8
端口数量:2端子数量:48
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX8
输出特性:3-STATE封装主体材料:CERAMIC
封装代码:QFF封装等效代码:QFL48,.75SQ
封装形状:SQUARE封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
最大待机电流:0.03 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.27 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:FLAT
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30Base Number Matches:1

IDT7134SA55FGB8 数据手册

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HIGH-SPEED  
IDT7134SA/LA  
4K x 8 DUAL-PORT  
STATIC SRAM  
Features  
Fully asynchronous operation from either port  
High-speed access  
Battery backup operation2V data retention (LA only)  
TTL-compatible; single 5V (±10%) power supply  
Available in 48-pin DIP, LCC, Flatpack and 52-pin PLCC  
Military product compliant to MIL-PRF-38535 QML  
Industrial temperature range (–40°C to +85°C) is available for  
selected speeds  
Military: 25/35/45/55/70ns (max.)  
Industrial:25/35/55ns(max.)  
– Commercial: 20/25/35/45/55/70ns (max.)  
Low-power operation  
IDT7134SA  
Active: 700mW (typ.)  
Standby: 5mW (typ.)  
IDT7134LA  
Green parts available, see ordering information  
Active: 700mW (typ.)  
Standby: 1mW (typ.)  
Functional Block Diagram  
R/W  
L
R/W  
CE  
R
R
CEL  
OEL  
OER  
I/O  
CONTROL  
I/O  
CONTROL  
I/O0L- I/O7L  
I/O0R- I/O7R  
ADDRESS  
DECODER  
ADDRESS  
DECODER  
MEMORY  
ARRAY  
A0L- A11L  
A0R- A11R  
2720 drw 01  
JANUARY 2006  
1
©2006IntegratedDeviceTechnology,Inc.  
DSC-2720/13  

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