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IDT7134SA55PGB

更新时间： 2024-11-15 13:08:39
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
11页 149K
描述
Dual-Port SRAM, 4KX8, 55ns, CMOS, PDIP48, 0.550 X 2.430 INCH, 0.180 INCH HEIGHT, GREEN, PLASTIC, MS-011AD, DIP-48

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IDT7134SA55PGB 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：DIP
包装说明：DIP, DIP48,.6针数：48
Reach Compliance Code：compliantECCN代码：3A001.A.2.C
HTS代码：8542.32.00.41风险等级：5.04
Is Samacsys：N最长访问时间：55 ns
I/O 类型：COMMONJESD-30 代码：R-PDIP-T48
JESD-609代码：e3长度：61.849 mm
内存密度：32768 bit内存集成电路类型：DUAL-PORT SRAM
内存宽度：8功能数量：1
端口数量：2端子数量：48
字数：4096 words字数代码：4000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-55 °C组织：4KX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP48,.6
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：5 V认证状态：Not Qualified
筛选级别：MIL-PRF-38535座面最大高度：5.08 mm
最大待机电流：0.03 A最小待机电流：4.5 V
子类别：SRAMs最大压摆率：0.27 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30宽度：15.24 mm
Base Number Matches：1

IDT7134SA55PGB 数据手册

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HIGH-SPEED  
IDT7134SA/LA  
4K x 8 DUAL-PORT  
STATIC SRAM  
Description  
Features  
◆
The IDT7134 is a high-speed 4K x 8 Dual-Port Static RAM  
designedtobeusedinsystemswhereon-chiphardwareportarbitration  
is not needed. This part lends itself to those systems which cannot  
tolerate wait states or are designed to be able to externally arbitrate or  
withstand contention when both sides simultaneously access the  
same Dual-Port RAM location.  
High-speed access  
– Military: 25/35/45/55/70ns (max.)  
– Industrial: 55ns (max.)  
– Commercial: 20/25/35/45/55/70ns (max.)  
Low-power operation  
◆
– IDT7134SA  
TheIDT7134providestwoindependentportswithseparatecontrol,  
address, and I/O pins that permit independent, asynchronous access  
forreadsorwritestoanylocationinmemory.Itistheuser’sresponsibility  
to ensure data integrity when simultaneously accessing the same  
memory location from both ports. An automatic power down feature,  
controlled by CE, permits the on-chip circuitry of each port to enter a  
very low standby power mode.  
FabricatedusingIDT’sCMOShigh-performancetechnology,these  
Dual-Port typically operate on only 700mW of power. Low-power (LA)  
versions offer battery backup data retention capability, with each port  
typically consuming 200µW from a 2V battery.  
Active: 700mW (typ.)  
Standby: 5mW (typ.)  
– IDT7134LA  
Active: 700mW (typ.)  
Standby: 1mW (typ.)  
Fully asynchronous operation from either port  
Battery backup operation—2V data retention  
TTL-compatible; single 5V (±10%) power supply  
Available in 48-pin DIP, LCC, Flatpack and 52-pin PLCC  
Military product compliant to MIL-PRF-38535 QML  
◆
◆
◆
◆
◆
◆
Industrial temperature range (–40°C to +85°C) is available for  
The IDT7134 is packaged on either a sidebraze or plastic 48-pin  
DIP, 48-pin LCC, 52-pin PLCC and 48-pin Flatpack. Military grade  
product is manufactured in compliance with the latest revision of MIL-  
PRF-38535 QML, making it ideally suited to military temperature  
applicationsdemandingthehighestlevelofperformanceandreliability.  
selected speeds  
Functional Block Diagram  
R/WL  
CEL  
R/WR  
CER  
L
OE  
OER  
COLUMN  
COLUMN  
I/O0L- I/O7L  
I/O0R- I/O7R  
I/O  
I/O  
LEFT SIDE  
RIGHT SIDE  
ADDRESS  
DECODE  
LOGIC  
ADDRESS  
DECODE  
LOGIC  
MEMORY  
ARRAY  
A0L- A11L  
A0R- A11R  
2720 drw 01  
JUNE 1999  
1
DSC-2720/9  
1234567...11

中文翻译

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与IDT7134SA55PGB相关器件

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IDT7134SA55PGI IDT

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 		Dual-Port SRAM, 4KX8, 55ns, CMOS, PDIP48, 0.550 X 2.430 INCH, 0.180 INCH HEIGHT, GREEN, PL
IDT7134SA55PI IDT

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IDT7134SA70C IDT

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IDT7134SA70CB IDT

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IDT7134SA70CG IDT

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 		暂无描述
IDT7134SA70CI IDT

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 		HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM
IDT7134SA70F IDT

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 		HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
IDT7134SA70F8 IDT

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 		Multi-Port SRAM, 4KX8, 70ns, CMOS, CQFP48
IDT7134SA70FB IDT

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 		HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
IDT7134SA70FB8 IDT

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 		Multi-Port SRAM, 4KX8, 70ns, CMOS, CQFP48

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