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IDT71024S20TYI8 PDF预览

IDT71024S20TYI8

更新时间: 2024-10-03 03:45:19
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管
页数 文件大小 规格书
8页 680K
描述
Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32

IDT71024S20TYI8 数据手册

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CMOS Static RAM  
1 Meg (128K x 8-Bit)  
IDT71024S/MS  
Features  
Description  
128K x 8 advanced high-speed CMOS static RAM  
Commercial (0°C to +70°C), Industrial (–40°C to +85°C)  
Equal access and cycle times  
TheIDT71024isa1,048,576-bithigh-speedstaticRAMorganizedas  
128K x 8. It is fabricated using IDTs high-performance, high-reliability  
CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-  
vativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-  
speedmemoryneeds.  
— CommercialandIndustrial:12/15/20ns  
Two Chip Selects plus one Output Enable pin  
Bidirectional inputs and outputs directly  
TTL-compatible  
Low power consumption via chip deselect  
Available in 300 and 400 mil Plastic SOJ.  
The IDT71024 has an output enable pin which operates as fast  
as 6ns, with address access times as fast as 12ns available. All  
bidirectional inputs and outputs of the IDT71024 are TTL-compat-  
ible, and operation is from a single 5V supply. Fully static asynchro-  
nous circuitry is used; no clocks or refreshes are required for  
operation.  
The IDT71024 is packaged in 32-pin 300 mil Plastic SOJ and 32-  
pin 400 mil Plastic SOJ.  
Functional Block Diagram  
A0  
1,048,576-BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A16  
8
8
I/O0–I/O  
7
¥
I/O CONTROL  
8
WE  
OE  
CONTROL  
LOGIC  
CS1  
CS2  
2964 drw 01  
OCTOBER 2008  
1
©2007IntegratedDeviceTechnology,Inc.  
DSC-2964/17  

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