是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BGA |
包装说明: | FBGA-208 | 针数: | 208 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.32 |
Is Samacsys: | N | 最长访问时间: | 15 ns |
其他特性: | FLOW-THROUGH OR PIPELINED ARCHITECTURE | JESD-30 代码: | S-PBGA-B208 |
JESD-609代码: | e0 | 长度: | 15 mm |
内存密度: | 2359296 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 18 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 208 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128KX18 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.45 V | 最小供电电压 (Vsup): | 3.15 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 20 | 宽度: | 15 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT70V7399S133BFG | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 15ns, PBGA208, FBGA-208 | |
IDT70V7399S133BFG8 | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 15ns, PBGA208, FBGA-208 | |
IDT70V7399S133BFGI | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 15ns, PBGA208, FBGA-208 | |
IDT70V7399S133BFI | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. | |
IDT70V7399S133BFI8 | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 15ns, PBGA208, FBGA-208 | |
IDT70V7399S133DD | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. | |
IDT70V7399S133DDG | IDT |
获取价格 |
Dual-Port SRAM, 128KX18, 15ns, PQFP144, TQFP-144 | |
IDT70V7399S133DDGI | IDT |
获取价格 |
暂无描述 | |
IDT70V7399S133DDI | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. | |
IDT70V7399S166BC | IDT |
获取价格 |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. |