是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | not_compliant |
风险等级: | 5.6 | 最长访问时间: | 12 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-PQFP-G208 |
JESD-609代码: | e0 | 内存密度: | 9437184 bit |
内存集成电路类型: | MULTI-PORT SRAM | 内存宽度: | 36 |
端口数量: | 2 | 端子数量: | 208 |
字数: | 262144 words | 字数代码: | 256000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 256KX36 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | QFP | 封装等效代码: | QFP208,1.2SQ,20 |
封装形状: | SQUARE | 封装形式: | FLATPACK |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 2.5,2.5/3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.01 A | 最小待机电流: | 2.4 V |
子类别: | SRAMs | 最大压摆率: | 0.355 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT70T651S12DRGI8 | IDT |
获取价格 |
Multi-Port SRAM, 256KX36, 12ns, CMOS, PQFP208 | |
IDT70T651S12DRI | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC | |
IDT70T651S12DRI8 | IDT |
获取价格 |
Multi-Port SRAM, 256KX36, 12ns, CMOS, PQFP208 | |
IDT70T651S15BC | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC | |
IDT70T651S15BC8 | IDT |
获取价格 |
Dual-Port SRAM, 256KX36, 15ns, CMOS, PBGA256, BGA-256 | |
IDT70T651S15BCG | IDT |
获取价格 |
Dual-Port SRAM, 256KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM PITCH, GREEN, BGA-256 | |
IDT70T651S15BCG8 | IDT |
获取价格 |
Dual-Port SRAM, 256KX36, 15ns, CMOS, PBGA256, BGA-256 | |
IDT70T651S15BCI | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC | |
IDT70T651S15BF | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFAC | |
IDT70T651S15BF8 | IDT |
获取价格 |
Dual-Port SRAM, 256KX36, 15ns, CMOS, PBGA208, FBGA-208 |