是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48 |
针数: | 48 | Reach Compliance Code: | not_compliant |
ECCN代码: | 3A001.A.2.C | HTS代码: | 8542.32.00.41 |
风险等级: | 5.83 | 最长访问时间: | 25 ns |
其他特性: | BATTERY BACK-UP | I/O 类型: | COMMON |
JESD-30 代码: | R-CDIP-T48 | JESD-609代码: | e0 |
长度: | 60.96 mm | 内存密度: | 8192 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 48 | 字数: | 1024 words |
字数代码: | 1000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 1KX8 | 输出特性: | 3-STATE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装等效代码: | DIP48,.6 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 筛选级别: | 38535Q/M;38534H;883B |
座面最大高度: | 4.826 mm | 最大待机电流: | 0.04 A |
最小待机电流: | 4.5 V | 子类别: | SRAMs |
最大压摆率: | 0.3 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT7030SA25P | ETC |
获取价格 |
x8 Dual-Port SRAM | |
IDT7030SA35C | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 35ns, CMOS, CDIP48, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48 | |
IDT7030SA35CB | ETC |
获取价格 |
x8 Dual-Port SRAM | |
IDT7030SA35P | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 35ns, CMOS, PDIP48, 0.600 INCH, PLASTIC, DIP-48 | |
IDT7030SA35PB | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 35ns, PDIP48, 0.600 INCH, PLASTIC, DIP-48 | |
IDT7030SA45CB | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 45ns, CMOS, CDIP48, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48 | |
IDT7030SA45PB | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 45ns, PDIP48, 0.600 INCH, PLASTIC, DIP-48 | |
IDT7030SAC | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, CDIP48, DIP-48 | |
IDT7030SAP | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, PDIP48, 0.600 INCH, PLASTIC, DIP-48 | |
IDT7032LA20C | ETC |
获取价格 |
x8 Dual-Port SRAM |