是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | 0.600 INCH, PLASTIC, DIP-48 | 针数: | 48 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.67 |
最长访问时间: | 35 ns | 其他特性: | BATTERY BACK-UP |
JESD-30 代码: | R-PDIP-T48 | JESD-609代码: | e0 |
长度: | 61.849 mm | 内存密度: | 8192 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 1024 words | 字数代码: | 1000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 1KX8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT7030LA45CB | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 45ns, CMOS, CDIP48, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48 | |
IDT7030LAC | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, CDIP48, DIP-48 | |
IDT7030LAP | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, PDIP48, 0.600 INCH, PLASTIC, DIP-48 | |
IDT7030SA20C | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 20ns, CMOS, CDIP48, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48 | |
IDT7030SA20P | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 20ns, CMOS, PDIP48, 0.600 INCH, PLASTIC, DIP-48 | |
IDT7030SA25C | ETC |
获取价格 |
x8 Dual-Port SRAM | |
IDT7030SA25CB | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 25ns, CMOS, CDIP48, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48 | |
IDT7030SA25P | ETC |
获取价格 |
x8 Dual-Port SRAM | |
IDT7030SA35C | IDT |
获取价格 |
Dual-Port SRAM, 1KX8, 35ns, CMOS, CDIP48, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-48 | |
IDT7030SA35CB | ETC |
获取价格 |
x8 Dual-Port SRAM |