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IDT6198S55DB PDF预览

IDT6198S55DB

更新时间: 2024-11-10 22:57:15
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器
页数 文件大小 规格书
8页 83K
描述
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control

IDT6198S55DB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.300 INCH, CERDIP-24
针数:24Reach Compliance Code:not_compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-GDIP-T24JESD-609代码:e0
长度:32.004 mm内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端口数量:1
端子数量:24字数:16384 words
字数代码:16000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:16KX4输出特性:3-STATE
可输出:YES封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP24,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
座面最大高度:5.08 mm最大待机电流:0.02 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.14 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:7.62 mm
Base Number Matches:1

IDT6198S55DB 数据手册

 浏览型号IDT6198S55DB的Datasheet PDF文件第2页浏览型号IDT6198S55DB的Datasheet PDF文件第3页浏览型号IDT6198S55DB的Datasheet PDF文件第4页浏览型号IDT6198S55DB的Datasheet PDF文件第5页浏览型号IDT6198S55DB的Datasheet PDF文件第6页浏览型号IDT6198S55DB的Datasheet PDF文件第7页 
IDT6198S  
IDT6198L  
CMOS STATIC RAM  
64K (16K x 4-BIT)  
with Output Control  
Integrated Device Technology, Inc.  
niques, provides a cost-effective approach for memory inten-  
sive applications. Timing parameters have been specified to  
meet the speed demands of the IDT79R3000 RISC proces-  
sors.  
Access times as fast as 15ns are available. The IDT6198  
offersareducedpowerstandbymode, ISB1, whichisactivated  
when CS goes HIGH. This capability significantly decreases  
system, while enhancing system reliability. The low-power  
version (L) also offers a battery backup data retention capa-  
bility where the circuit typically consumes only 30µW when  
operating from a 2V battery.  
FEATURES:  
• High-speed (equal access and cycle times)  
— Military: 20/25/35/45/55/70/85ns (max.)  
— Commercial: 15/20/25/35ns (max.)  
• OutputEnable(OE)pinavailableforaddedsystemflexibility  
• Low-power consumption  
• JEDEC compatible pinout  
• Battery back-up operation—2V data retention (L version  
only)  
• 24-pin CERDIP, high-density 28-pin leadless chip carrier,  
and 24-pin SOJ  
• Produced with advanced CMOS technology  
• Bidirectional data inputs and outputs  
• Military product compliant to MIL-STD-883, Class B  
All inputs and outputs are TTL-compatible and operate  
from a single 5V supply.  
TheIDT6198ispackagedineithera24-pin300mil CERDIP,  
28-pin leadless chip carrier or 24-pin J-bend small outline IC.  
Military grade product is manufactured in compliance with  
the latest revision of MIL-STD-883, Class B, making it ideally  
suited to military temperature applications demanding the  
highest level of performance and reliability.  
DESCRIPTION:  
The IDT6198 is a 65,536-bit high-speed static RAM orga-  
nized as 16K x 4. It is fabricated using IDT’s high-perfor-  
mance, high-reliabilitytechnology—CMOS. Thisstate-of-the-  
art technology, combined with innovative circuit design tech-  
FUNCTIONAL BLOCK DIAGRAM  
A0  
VCC  
GND  
65,536-BIT  
MEMORY ARRAY  
DECODER  
A13  
I/O0  
COLUMN I/O  
I/O1  
INPUT  
DATA  
CONTROL  
I/O2  
I/O3  
CS  
WE  
OE  
2987 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
MAY 1994  
1994 Integrated Device Technology, Inc.  
DSC-1010/4  
6.3  
1

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