Datasheet > 存储 > SRAM> IDT6116LA120SOB

IDT6116LA120SOB

更新时间： 2024-11-11 22:08:19

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
10页	95K
描述
CMOS STATIC RAM 16K (2K x 8 BIT)

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IDT6116LA120SOB 数据手册

IDT6116SA

IDT6116LA

CMOS STATIC RAM

16K (2K x 8 BIT)

Integrated Device Technology, Inc.

FEATURES:

DESCRIPTION:

• High-speed access and chip select times

— Military: 20/25/35/45/55/70/90/120/150ns (max.)

— Commercial: 15/20/25/35/45ns (max.)

• Low-power consumption

The IDT6116SA/LA is a 16,384-bit high-speed static RAM

organized as 2K x 8. It is fabricated using IDT's high-perfor-

mance, high-reliability CMOS technology.

Access times as fast as 15ns are available. The circuit also

offers a reduced power standby mode. When CSgoes HIGH,

the circuit will automatically go to, and remain in, a standby

power mode, as long as CS remains HIGH. This capability

provides significant system level power and cooling savings.

The low-power (LA) version also offers a battery backup data

retention capability where the circuit typically consumes only

1µW to 4µW operating off a 2V battery.

All inputs and outputs of the IDT6116SA/LA are TTL-

compatible. Fullystaticasynchronouscircuitryisused, requir-

ing no clocks or refreshing for operation.

The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil

plasticorceramicDIP anda24-leadgull-wingSOIC, anda24

-lead J-bend SOJ providing high board-level packing densi-

ties.

• Battery backup operation

— 2V data retention voltage (LA version only)

• Produced with advanced CMOS high-performance

technology

• CMOS process virtually eliminates alpha particle

soft-error rates

• Input and output directly TTL-compatible

• Static operation: no clocks or refresh required

• Available in ceramic and plastic 24-pin DIP, 24-pin Thin

Dip and 24-pin SOIC and 24-pin SOJ

• Military product compliant to MIL-STD-833, Class B

Militarygradeproductismanufacturedincompliancetothe

latest version of MIL-STD-883, Class B, making it ideally

suited to military temperature applications demanding the

highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

A ₀

VCC

128 X 128

ADDRESS

DECODER

MEMORY

GND

ARRAY

A ₁₀

I/O 0

I/O CONTROL

INPUT

DATA

CIRCUIT

I/O₇

CONTROL

CIRCUIT

3089 drw 01

The IDT logo is aregistered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES

MARCH 1996

1996 Integrated Device Technology, Inc.

For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

5.1

3089/1

12 3 4 5 6 7...10

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与IDT6116LA120SOB相关器件

型号	品牌	获取价格	描述	数据表
IDT6116LA120TD	IDT	获取价格	CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA120TDB	IDT	获取价格	CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA120TP	IDT	获取价格	CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA120TPB	IDT	获取价格	CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA120Y	IDT	获取价格	CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA120YB	IDT	获取价格	CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA150D	IDT	获取价格	CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA150DB	IDT	获取价格	CMOS STATIC RAM 16K (2K x 8 BIT)
IDT6116LA150DM	IDT	获取价格	Standard SRAM, 2KX8, 150ns, CMOS, CDIP24
IDT6116LA150EB	IDT	获取价格	Standard SRAM, 2KX8, 150ns, CMOS, CDFP24, 0.300 INCH, CERPACK-24

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