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IDD06SG60C PDF预览

IDD06SG60C

更新时间: 2024-11-25 11:15:03
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管
页数 文件大小 规格书
7页 271K
描述
3rd Generation thinQ!TM SiC Schottky Diode

IDD06SG60C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:GREEN, PLASTIC PACKAGE-3针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.53
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.3 VJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:23 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IDD06SG60C 数据手册

 浏览型号IDD06SG60C的Datasheet PDF文件第2页浏览型号IDD06SG60C的Datasheet PDF文件第3页浏览型号IDD06SG60C的Datasheet PDF文件第4页浏览型号IDD06SG60C的Datasheet PDF文件第5页浏览型号IDD06SG60C的Datasheet PDF文件第6页浏览型号IDD06SG60C的Datasheet PDF文件第7页 
IDD06SG60C  
3rd Generation thinQ!TM SiC Schottky Diode  
Features  
Product Summary  
• Revolutionary semiconductor material - Silicon Carbide  
• Switching behavior benchmark  
V DC  
600  
8
V
nC  
A
Q C  
• No reverse recovery / No forward recovery  
• Temperature independent switching behavior  
• High surge current capability  
I F; T C< 130 °C  
6
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
• Breakdown voltage tested at 20mA2)  
• Optimized for high temperature operation  
• Lowest Figure of Merit QC/IF  
• Halogen-free according to IEC 61249-2-21 definition  
thinQ! 3G Diode designed for fast switching applications like:  
• SMPS e.g.; CCM PFC  
• Motor Drives; Solar Applications; UPS  
Type  
Package  
Marking  
Pin 1  
Pin 2  
Pin 3  
IDD06SG60C  
PG-TO252-3  
D06G60C  
n.c.  
A
C
Maximum ratings  
Parameter  
Value  
Symbol Conditions  
Unit  
I F  
T C<130 °C  
Continuous forward current  
6
32  
A
I F,SM  
T C=25 °C, t p=10 ms  
T C=150 °C, t p=10 ms  
T C=25 °C, t p=10 µs  
T C=25 °C, t p=10 ms  
T C=150 °C, t p=10 ms  
T j=25 °C  
Surge non-repetitive forward current,  
sine halfwave  
23  
I F,max  
Non-repetitive peak forward current  
190  
5.1  
i 2dt  
A2s  
i ²t value  
2.5  
V RRM  
dv/ dt  
P tot  
Repetitive peak reverse voltage  
Diode dv/dt ruggedness  
600  
50  
V
VR= 0….480 V  
V/ns  
W
T C=25 °C  
Power dissipation  
71  
T j, T stg  
Operating and storage temperature  
-55 ... 175  
260  
°C  
Soldering temperature, reflow  
soldering (max)  
T sold  
reflow MSL1  
page 1  
Rev. 2.0  
2010-03-19  

IDD06SG60C 替代型号

型号 品牌 替代类型 描述 数据表
IDH06SG60C INFINEON

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